Since spintronics devices are capable of retaining digital information as -Their magnetization direction, development of nonvolatile memories, so-called magnetoresistive random access memories (MRAMs), to realize low-power integrated circuits with -The von Neumann architecture has been one of -The mainstream outlets of spintronics research pursued in -The last several decades. Meanwhile, neuromorphic-computing hardware with non-von Neumann architecture has started to attract a great deal of attention in -The field of microelectronics. Neuromorphic computing allows for completion of complex tasks at high speeds and at low power consumption levels that conventional von Neumann computers struggle with [1,2]. Recent researches point out that -The spintronics devices also have -The capable characteristics to model -The human brain [3-5]. In this presentation, we describe a proof-of-concept demonstration of an associative memory operation like -The human brain using a spintronics device . For this purpose, we employ a recently-found spin-orbit torque (SOT) induced switching [7-9] device consisting of an antiferromagnet (AFM)/ ferromagnet (FM) stack structure [10-12], which shows an analogue-like resistance switching and thus serves as an artificial synapse in artificial neural networks.