Unusual photoluminescence decay of porous silicon prepared by rapid thermal oxidation and quenching in liquid nitrogen

Toshimasa Wadayama, Tuyoshi Arigane, Kensho Hayamizu, Aritada Hatta

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Rapid thermal oxidation and quenching in liquid nitrogen (RTOQN) has been examined on anodized porous silicon (PS). The as-anodized PS samples exhibit a photoluminescence peak at 750 nm that decays instantaneously upon discontinuance of 325-nm He-Cd laser irradiation. In contrast, PS samples after RTOQN show a luminescence peak at 560 nm that decays very slowly (> 1 s). In this paper some detailed RTOQN conditions leading to such a slow-decay photoluminescence are defined.

Original languageEnglish
Pages (from-to)2832-2837
Number of pages6
JournalMaterials Transactions
Volume43
Issue number11
DOIs
Publication statusPublished - 2002 Nov

Keywords

  • Infrared absorption spectroscopy
  • Photoluminescence
  • Photoluminescence decay
  • Porous silicon
  • Raman spectroscopy
  • Thermal oxidation
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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