Universal parameter evaluating SiO2/SiC interface quality based on scanning nonlinear dielectric microscopy

Norimichi Chinone, Alpana Nayak, Ryoji Kosugi, Yasunori Tanaka, Shinsuke Harada, Yuji Kiuchi, Hajime Okumura, Yasuo Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Oxidized both silicon-face (Si-face) and carbon-face (C-face) wafers with various post-oxidation-annealing conditions were measured by scanning nonlinear dielectric microscopy (SNDM) and method for evaluating SiO2/SiC interface quality using SNDM was investigated. We found that the normalized standard deviation of SNDM image was good parameter to evaluate SiO2/SiC interface of Si and C-face. SNDM measurement does not need electrode fabrication to measure C-V curve, but needs just scan on the oxidized wafer with conductive tip, which is easier and quicker. This technique enables us to quickly examine the effect of variation of process parameters in MOS fabrication and to effectively reduce the time needed for R&D cycle.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2016
EditorsKonstantinos Zekentes, Konstantinos Zekentes, Konstantin V. Vasilevskiy, Nikolaos Frangis
PublisherTrans Tech Publications Ltd
Number of pages4
ISBN (Print)9783035710434
Publication statusPublished - 2017
Event11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016 - Halkidiki, Greece
Duration: 2016 Sep 252016 Sep 29

Publication series

NameMaterials Science Forum
Volume897 MSF
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752


Other11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016


  • Scanning nonlinear dielectric microscopy
  • SiO/SiC interface

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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