Unitraveling-carrier-photodiode-integrated high-electron-mobility transistor for photonic double-mixing

Akira Satou, Yuya Omori, Kazuki Nishimura, Tomotaka Hosotani, Katsumi Iwatsuki, Tetsuya Suemitsu, Taiichi Otsuji

Research output: Contribution to journalArticlepeer-review


We newly propose and experimentally investigate an InGaAs-channel high-electron-mobility transistor integrated with a unitraveling-carrier photodiode (UTC-PD) structure on its source side for an efficient optical-to-wireless carrier frequency downconversion utilizing its photonic double-mixing functionality. It is demonstrated that the double-mixing conversion gain is significantly enhanced by 20 dB compared with a standard HEMT, owing to the integration of the UTC-PD structure. The device operation principle expected from the device structure is confirmed through measured DC characteristics and photomixing/double-mixing characteristics in the millimeter-wave region. The feasibility of the device for practical use in future optical-wireless convergence networks is addressed.

Original languageEnglish
Article number9360445
Pages (from-to)3341-3349
Number of pages9
JournalJournal of Lightwave Technology
Issue number10
Publication statusPublished - 2021 May 15
Externally publishedYes


  • Full coherent network
  • Hemt
  • Optical-to-wireless carrier frequency downconversion
  • Photonic double-mixing
  • Utc-pd

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


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