Unitraveling-Carrier-Photodiode-Integrated High-Electron-Mobility Transistor for Photonic Double-Mixing

Akira Satou; Yuya Omori; Kazuki Nishimura; Tomotaka Hosotani; Katsumi Iwatsuki; Tetsuya Suemitsu; Taiichi Otsuji

doi:10.1109/JLT.2021.3060795

Unitraveling-Carrier-Photodiode-Integrated High-Electron-Mobility Transistor for Photonic Double-Mixing

Akira Satou, Yuya Omori, Kazuki Nishimura, Tomotaka Hosotani, Katsumi Iwatsuki, Tetsuya Suemitsu, Taiichi Otsuji

Research output: Contribution to journal › Article › peer-review

Abstract

We newly propose and experimentally investigate an InGaAs-channel high-electron-mobility transistor integrated with a unitraveling-carrier photodiode (UTC-PD) structure on its source side for an efficient optical-to-wireless carrier frequency downconversion utilizing its photonic double-mixing functionality. It is demonstrated that the double-mixing conversion gain is significantly enhanced by 20 dB compared with a standard HEMT, owing to the integration of the UTC-PD structure. The device operation principle expected from the device structure is confirmed through measured DC characteristics and photomixing/double-mixing characteristics in the millimeter-wave region. The feasibility of the device for practical use in future optical-wireless convergence networks is addressed.

Original language	English
Journal	Journal of Lightwave Technology
DOIs	https://doi.org/10.1109/JLT.2021.3060795
Publication status	Accepted/In press - 2021

Keywords

HEMT
HEMTs
High-speed optical techniques
Logic gates
Optical mixing
Optical modulation
Photonics
Standards
UTC-PD
full coherent network
optical-to-wireless carrier frequency downconversion
photonic double-mixing

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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@article{92ef6876bfa7425fb164628a1c347939,

title = "Unitraveling-Carrier-Photodiode-Integrated High-Electron-Mobility Transistor for Photonic Double-Mixing",

abstract = "We newly propose and experimentally investigate an InGaAs-channel high-electron-mobility transistor integrated with a unitraveling-carrier photodiode (UTC-PD) structure on its source side for an efficient optical-to-wireless carrier frequency downconversion utilizing its photonic double-mixing functionality. It is demonstrated that the double-mixing conversion gain is significantly enhanced by 20 dB compared with a standard HEMT, owing to the integration of the UTC-PD structure. The device operation principle expected from the device structure is confirmed through measured DC characteristics and photomixing/double-mixing characteristics in the millimeter-wave region. The feasibility of the device for practical use in future optical-wireless convergence networks is addressed.",

keywords = "HEMT, HEMTs, High-speed optical techniques, Logic gates, Optical mixing, Optical modulation, Photonics, Standards, UTC-PD, full coherent network, optical-to-wireless carrier frequency downconversion, photonic double-mixing",

author = "Akira Satou and Yuya Omori and Kazuki Nishimura and Tomotaka Hosotani and Katsumi Iwatsuki and Tetsuya Suemitsu and Taiichi Otsuji",

note = "Publisher Copyright: IEEE",

year = "2021",

doi = "10.1109/JLT.2021.3060795",

language = "English",

journal = "Journal of Lightwave Technology",

issn = "0733-8724",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Unitraveling-Carrier-Photodiode-Integrated High-Electron-Mobility Transistor for Photonic Double-Mixing

AU - Satou, Akira

AU - Omori, Yuya

AU - Nishimura, Kazuki

AU - Hosotani, Tomotaka

AU - Iwatsuki, Katsumi

AU - Suemitsu, Tetsuya

AU - Otsuji, Taiichi

N1 - Publisher Copyright: IEEE

PY - 2021

Y1 - 2021

N2 - We newly propose and experimentally investigate an InGaAs-channel high-electron-mobility transistor integrated with a unitraveling-carrier photodiode (UTC-PD) structure on its source side for an efficient optical-to-wireless carrier frequency downconversion utilizing its photonic double-mixing functionality. It is demonstrated that the double-mixing conversion gain is significantly enhanced by 20 dB compared with a standard HEMT, owing to the integration of the UTC-PD structure. The device operation principle expected from the device structure is confirmed through measured DC characteristics and photomixing/double-mixing characteristics in the millimeter-wave region. The feasibility of the device for practical use in future optical-wireless convergence networks is addressed.

AB - We newly propose and experimentally investigate an InGaAs-channel high-electron-mobility transistor integrated with a unitraveling-carrier photodiode (UTC-PD) structure on its source side for an efficient optical-to-wireless carrier frequency downconversion utilizing its photonic double-mixing functionality. It is demonstrated that the double-mixing conversion gain is significantly enhanced by 20 dB compared with a standard HEMT, owing to the integration of the UTC-PD structure. The device operation principle expected from the device structure is confirmed through measured DC characteristics and photomixing/double-mixing characteristics in the millimeter-wave region. The feasibility of the device for practical use in future optical-wireless convergence networks is addressed.

KW - HEMT

KW - HEMTs

KW - High-speed optical techniques

KW - Logic gates

KW - Optical mixing

KW - Optical modulation

KW - Photonics

KW - Standards

KW - UTC-PD

KW - full coherent network

KW - optical-to-wireless carrier frequency downconversion

KW - photonic double-mixing

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JF - Journal of Lightwave Technology

SN - 0733-8724

ER -

Unitraveling-Carrier-Photodiode-Integrated High-Electron-Mobility Transistor for Photonic Double-Mixing

Abstract

Keywords

ASJC Scopus subject areas

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