Unitraveling-Carrier-Photodiode-Integrated High-Electron-Mobility Transistor for Photonic Double-Mixing

Akira Satou, Yuya Omori, Kazuki Nishimura, Tomotaka Hosotani, Katsumi Iwatsuki, Tetsuya Suemitsu, Taiichi Otsuji

Research output: Contribution to journalArticlepeer-review

Abstract

We newly propose and experimentally investigate an InGaAs-channel high-electron-mobility transistor integrated with a unitraveling-carrier photodiode (UTC-PD) structure on its source side for an efficient optical-to-wireless carrier frequency downconversion utilizing its photonic double-mixing functionality. It is demonstrated that the double-mixing conversion gain is significantly enhanced by 20 dB compared with a standard HEMT, owing to the integration of the UTC-PD structure. The device operation principle expected from the device structure is confirmed through measured DC characteristics and photomixing/double-mixing characteristics in the millimeter-wave region. The feasibility of the device for practical use in future optical-wireless convergence networks is addressed.

Original languageEnglish
JournalJournal of Lightwave Technology
DOIs
Publication statusAccepted/In press - 2021

Keywords

  • HEMT
  • HEMTs
  • High-speed optical techniques
  • Logic gates
  • Optical mixing
  • Optical modulation
  • Photonics
  • Standards
  • UTC-PD
  • full coherent network
  • optical-to-wireless carrier frequency downconversion
  • photonic double-mixing

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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