Uniform InGaAs micro-discs on Si by micro-channel selective-area movpe

Momoko Deura, T. Hoshii, M. Takenaka, S. Takagi, Y. Nakano, M. Sugiyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

We have improved in-plane uniformity of crystal shape for InGaAs micro-discs using a multi-step growth in micro-channel selective-area metal-organic vapor phase epitaxy on Si(111) substrates. The multi-step growth employs a gas flow sequence in which the partial pressure of a Ga source is modulated to control the initial nucleation and the growth mode. At the initial stage of growth, we grew InAs in order to obtain a single nucleus in each growth area. After the growth area was almost buried by InAs, Ga-rich InGaAs was grown to switch to a lateral growth mode. The Ga partial pressure was then reduced to continue lateral growth while avoiding 3-dimensional growth. This novel growth sequence suppressed unintended vertical growth of InGaAs islands and enhanced lateral growth; the averaged diameter was increased by 25%, the averaged height was reduced by 50% and the standard deviation of the height was reduced by 75%.

Original languageEnglish
Title of host publicationIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
Pages48-51
Number of pages4
DOIs
Publication statusPublished - 2009 Oct 2
EventIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 - Newport Beach, CA, United States
Duration: 2009 May 102009 May 14

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Other

OtherIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
CountryUnited States
CityNewport Beach, CA
Period09/5/1009/5/14

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Deura, M., Hoshii, T., Takenaka, M., Takagi, S., Nakano, Y., & Sugiyama, M. (2009). Uniform InGaAs micro-discs on Si by micro-channel selective-area movpe. In IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 (pp. 48-51). [5012412] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2009.5012412