We have investigated the effect of homogenous uniaxial and biaxial strains on the thermal oxidation processes of Si with newly developed techniques. X-ray photoelectron spectroscopy (XPS) and ellipsometry measurements have revealed that the biaxial compressive strain suppresses the oxidation rate at temperatures lower than 800 °C, while the uniaxial strain does not affect the oxidation rate. It has been also found that stress during the thermal oxidation does not cause any change in the electronic states of the oxide which are characterized by XPS and x-ray absorption near edge structure.
ASJC Scopus subject areas
- Physics and Astronomy(all)