Uniaxial and biaxial strain field dependence of the thermal oxidation rate of silicon

Hirokazu Noma, Hiroyuki Takahashi, Hiroshi Fujioka, Masahara Oshima, Yuji Baba, Kazuyuki Hirose, Masaaki Niwa, Koji Usuda, Norio Hirashita

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13 Citations (Scopus)

Abstract

We have investigated the effect of homogenous uniaxial and biaxial strains on the thermal oxidation processes of Si with newly developed techniques. X-ray photoelectron spectroscopy (XPS) and ellipsometry measurements have revealed that the biaxial compressive strain suppresses the oxidation rate at temperatures lower than 800 °C, while the uniaxial strain does not affect the oxidation rate. It has been also found that stress during the thermal oxidation does not cause any change in the electronic states of the oxide which are characterized by XPS and x-ray absorption near edge structure.

Original languageEnglish
Pages (from-to)5434-5437
Number of pages4
JournalJournal of Applied Physics
Volume90
Issue number10
DOIs
Publication statusPublished - 2001 Nov 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Noma, H., Takahashi, H., Fujioka, H., Oshima, M., Baba, Y., Hirose, K., Niwa, M., Usuda, K., & Hirashita, N. (2001). Uniaxial and biaxial strain field dependence of the thermal oxidation rate of silicon. Journal of Applied Physics, 90(10), 5434-5437. https://doi.org/10.1063/1.1413229