Undoped silicon layers grown by gas source molecular beam epitaxy using Si₂H₆

Undoped Si layers were homoepitaxially grown on Si(001) substrates by gas source molecular beam epitaxy using pure disilane (Si₂H₆) at various substrate temperatures ranging from 533°C to 1000°C. Single-crystalline epilayers were obtained throughout the whole temperature range. Growth rates, crystallinity of the epilayers, and redistribution of impurities during crystal growth were investigated. Undoped layers grown at 700°C exhibited n-type conduction, with the carrier concentration in the 10¹⁴ cm^-3 range and the electron mobility of 1500 cm²/V·s at room temperature.