Undoped silicon layers grown by gas source molecular beam epitaxy using Si2H6

Tatsuo Yoshinobu; Takashi Fuyuki; Hiroyuki Matsunami

doi:10.1143/JJAP.31.L1213

Undoped silicon layers grown by gas source molecular beam epitaxy using Si₂H₆

Tatsuo Yoshinobu, Takashi Fuyuki, Hiroyuki Matsunami

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Undoped Si layers were homoepitaxially grown on Si(001) substrates by gas source molecular beam epitaxy using pure disilane (Si₂H₆) at various substrate temperatures ranging from 533°C to 1000°C. Single-crystalline epilayers were obtained throughout the whole temperature range. Growth rates, crystallinity of the epilayers, and redistribution of impurities during crystal growth were investigated. Undoped layers grown at 700°C exhibited n-type conduction, with the carrier concentration in the 10¹⁴ cm^-3 range and the electron mobility of 1500 cm²/V·s at room temperature.

Original language	English
Pages (from-to)	L1213-L1215
Journal	Japanese journal of applied physics
Volume	31
Issue number	9
DOIs	https://doi.org/10.1143/JJAP.31.L1213
Publication status	Published - 1992 Sep
Externally published	Yes

Keywords

Carrier concentration
Disilane
Gas source molecular beam epitaxy
Growth rate
Mobility
Silicon

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Undoped silicon layers grown by gas source molecular beam epitaxy using Si2H6",

abstract = "Undoped Si layers were homoepitaxially grown on Si(001) substrates by gas source molecular beam epitaxy using pure disilane (Si2H6) at various substrate temperatures ranging from 533°C to 1000°C. Single-crystalline epilayers were obtained throughout the whole temperature range. Growth rates, crystallinity of the epilayers, and redistribution of impurities during crystal growth were investigated. Undoped layers grown at 700°C exhibited n-type conduction, with the carrier concentration in the 1014 cm-3 range and the electron mobility of 1500 cm2/V·s at room temperature.",

keywords = "Carrier concentration, Disilane, Gas source molecular beam epitaxy, Growth rate, Mobility, Silicon",

author = "Tatsuo Yoshinobu and Takashi Fuyuki and Hiroyuki Matsunami",

year = "1992",

month = sep,

doi = "10.1143/JJAP.31.L1213",

language = "English",

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pages = "L1213--L1215",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

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T1 - Undoped silicon layers grown by gas source molecular beam epitaxy using Si2H6

AU - Yoshinobu, Tatsuo

AU - Fuyuki, Takashi

AU - Matsunami, Hiroyuki

PY - 1992/9

Y1 - 1992/9

N2 - Undoped Si layers were homoepitaxially grown on Si(001) substrates by gas source molecular beam epitaxy using pure disilane (Si2H6) at various substrate temperatures ranging from 533°C to 1000°C. Single-crystalline epilayers were obtained throughout the whole temperature range. Growth rates, crystallinity of the epilayers, and redistribution of impurities during crystal growth were investigated. Undoped layers grown at 700°C exhibited n-type conduction, with the carrier concentration in the 1014 cm-3 range and the electron mobility of 1500 cm2/V·s at room temperature.

AB - Undoped Si layers were homoepitaxially grown on Si(001) substrates by gas source molecular beam epitaxy using pure disilane (Si2H6) at various substrate temperatures ranging from 533°C to 1000°C. Single-crystalline epilayers were obtained throughout the whole temperature range. Growth rates, crystallinity of the epilayers, and redistribution of impurities during crystal growth were investigated. Undoped layers grown at 700°C exhibited n-type conduction, with the carrier concentration in the 1014 cm-3 range and the electron mobility of 1500 cm2/V·s at room temperature.

KW - Carrier concentration

KW - Disilane

KW - Gas source molecular beam epitaxy

KW - Growth rate

KW - Mobility

KW - Silicon

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