Undoped silicon layers grown by gas source molecular beam epitaxy using Si2H6

Tatsuo Yoshinobu, Takashi Fuyuki, Hiroyuki Matsunami

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Undoped Si layers were homoepitaxially grown on Si(001) substrates by gas source molecular beam epitaxy using pure disilane (Si2H6) at various substrate temperatures ranging from 533°C to 1000°C. Single-crystalline epilayers were obtained throughout the whole temperature range. Growth rates, crystallinity of the epilayers, and redistribution of impurities during crystal growth were investigated. Undoped layers grown at 700°C exhibited n-type conduction, with the carrier concentration in the 1014 cm-3 range and the electron mobility of 1500 cm2/V·s at room temperature.

Original languageEnglish
Pages (from-to)L1213-L1215
JournalJapanese journal of applied physics
Volume31
Issue number9
DOIs
Publication statusPublished - 1992 Sep
Externally publishedYes

Keywords

  • Carrier concentration
  • Disilane
  • Gas source molecular beam epitaxy
  • Growth rate
  • Mobility
  • Silicon

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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