Undoped Si layers were homoepitaxially grown on Si(001) substrates by gas source molecular beam epitaxy using pure disilane (Si2H6) at various substrate temperatures ranging from 533°C to 1000°C. Single-crystalline epilayers were obtained throughout the whole temperature range. Growth rates, crystallinity of the epilayers, and redistribution of impurities during crystal growth were investigated. Undoped layers grown at 700°C exhibited n-type conduction, with the carrier concentration in the 1014 cm-3 range and the electron mobility of 1500 cm2/V·s at room temperature.
- Carrier concentration
- Gas source molecular beam epitaxy
- Growth rate
ASJC Scopus subject areas
- Physics and Astronomy(all)