TY - JOUR
T1 - Undoped silicon layers grown by gas source molecular beam epitaxy using Si2H6
AU - Yoshinobu, Tatsuo
AU - Fuyuki, Takashi
AU - Matsunami, Hiroyuki
PY - 1992/9
Y1 - 1992/9
N2 - Undoped Si layers were homoepitaxially grown on Si(001) substrates by gas source molecular beam epitaxy using pure disilane (Si2H6) at various substrate temperatures ranging from 533°C to 1000°C. Single-crystalline epilayers were obtained throughout the whole temperature range. Growth rates, crystallinity of the epilayers, and redistribution of impurities during crystal growth were investigated. Undoped layers grown at 700°C exhibited n-type conduction, with the carrier concentration in the 1014 cm-3 range and the electron mobility of 1500 cm2/V·s at room temperature.
AB - Undoped Si layers were homoepitaxially grown on Si(001) substrates by gas source molecular beam epitaxy using pure disilane (Si2H6) at various substrate temperatures ranging from 533°C to 1000°C. Single-crystalline epilayers were obtained throughout the whole temperature range. Growth rates, crystallinity of the epilayers, and redistribution of impurities during crystal growth were investigated. Undoped layers grown at 700°C exhibited n-type conduction, with the carrier concentration in the 1014 cm-3 range and the electron mobility of 1500 cm2/V·s at room temperature.
KW - Carrier concentration
KW - Disilane
KW - Gas source molecular beam epitaxy
KW - Growth rate
KW - Mobility
KW - Silicon
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U2 - 10.1143/JJAP.31.L1213
DO - 10.1143/JJAP.31.L1213
M3 - Article
AN - SCOPUS:0026918576
VL - 31
SP - L1213-L1215
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 9
ER -