Understanding thickness-dependent charge transport in pentacene transistors by low-frequency noise

Yong Xu, Chuan Liu, William Scheideler, Songlin Li, Wenwu Li, Yen Fu Lin, Francis Balestra, Gerard Ghibaudo, Kazuhito Tsukagoshi

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

Close correlation between low-frequency noise and charge transport in pentacene transistors is observed. The trap density evolving with pentacene deposition reveals transformation of growth phase and different transport mechanisms. It explains the greatly altered mobility and contact resistance in which the upper surface's trapping plays an important role. Inspecting contact noise shows high density of traps at contacts that result possibly from pyramid like growth of pentacene or contact damage or both.

Original languageEnglish
Article number6594865
Pages (from-to)1298-1300
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number10
DOIs
Publication statusPublished - 2013 Sep 17
Externally publishedYes

Keywords

  • Contact resistance
  • film thickness
  • low-frequency noise (LFN)
  • mobility
  • organic transistors
  • pentacene
  • traps

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Understanding thickness-dependent charge transport in pentacene transistors by low-frequency noise'. Together they form a unique fingerprint.

Cite this