Understanding thickness-dependent charge transport in pentacene transistors by low-frequency noise

Yong Xu; Chuan Liu; William Scheideler; Songlin Li; Wenwu Li; Yen Fu Lin; Francis Balestra; Gerard Ghibaudo; Kazuhito Tsukagoshi

doi:10.1109/LED.2013.2277613

Understanding thickness-dependent charge transport in pentacene transistors by low-frequency noise

Yong Xu, Chuan Liu, William Scheideler, Songlin Li, Wenwu Li, Yen Fu Lin, Francis Balestra, Gerard Ghibaudo, Kazuhito Tsukagoshi

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Close correlation between low-frequency noise and charge transport in pentacene transistors is observed. The trap density evolving with pentacene deposition reveals transformation of growth phase and different transport mechanisms. It explains the greatly altered mobility and contact resistance in which the upper surface's trapping plays an important role. Inspecting contact noise shows high density of traps at contacts that result possibly from pyramid like growth of pentacene or contact damage or both.

Original language	English
Article number	6594865
Pages (from-to)	1298-1300
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	10
DOIs	https://doi.org/10.1109/LED.2013.2277613
Publication status	Published - 2013
Externally published	Yes

Keywords

Contact resistance
film thickness
low-frequency noise (LFN)
mobility
organic transistors
pentacene
traps

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2013.2277613

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title = "Understanding thickness-dependent charge transport in pentacene transistors by low-frequency noise",

abstract = "Close correlation between low-frequency noise and charge transport in pentacene transistors is observed. The trap density evolving with pentacene deposition reveals transformation of growth phase and different transport mechanisms. It explains the greatly altered mobility and contact resistance in which the upper surface's trapping plays an important role. Inspecting contact noise shows high density of traps at contacts that result possibly from pyramid like growth of pentacene or contact damage or both.",

keywords = "Contact resistance, film thickness, low-frequency noise (LFN), mobility, organic transistors, pentacene, traps",

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language = "English",

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AU - Xu, Yong

AU - Liu, Chuan

AU - Scheideler, William

AU - Li, Songlin

AU - Li, Wenwu

AU - Lin, Yen Fu

AU - Balestra, Francis

AU - Ghibaudo, Gerard

AU - Tsukagoshi, Kazuhito

PY - 2013

Y1 - 2013

N2 - Close correlation between low-frequency noise and charge transport in pentacene transistors is observed. The trap density evolving with pentacene deposition reveals transformation of growth phase and different transport mechanisms. It explains the greatly altered mobility and contact resistance in which the upper surface's trapping plays an important role. Inspecting contact noise shows high density of traps at contacts that result possibly from pyramid like growth of pentacene or contact damage or both.

AB - Close correlation between low-frequency noise and charge transport in pentacene transistors is observed. The trap density evolving with pentacene deposition reveals transformation of growth phase and different transport mechanisms. It explains the greatly altered mobility and contact resistance in which the upper surface's trapping plays an important role. Inspecting contact noise shows high density of traps at contacts that result possibly from pyramid like growth of pentacene or contact damage or both.

KW - Contact resistance

KW - film thickness

KW - low-frequency noise (LFN)

KW - mobility

KW - organic transistors

KW - pentacene

KW - traps

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DO - 10.1109/LED.2013.2277613

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

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ER -

Understanding thickness-dependent charge transport in pentacene transistors by low-frequency noise

Abstract

Keywords

ASJC Scopus subject areas

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