Abstract
Close correlation between low-frequency noise and charge transport in pentacene transistors is observed. The trap density evolving with pentacene deposition reveals transformation of growth phase and different transport mechanisms. It explains the greatly altered mobility and contact resistance in which the upper surface's trapping plays an important role. Inspecting contact noise shows high density of traps at contacts that result possibly from pyramid like growth of pentacene or contact damage or both.
Original language | English |
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Article number | 6594865 |
Pages (from-to) | 1298-1300 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 34 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2013 |
Externally published | Yes |
Keywords
- Contact resistance
- film thickness
- low-frequency noise (LFN)
- mobility
- organic transistors
- pentacene
- traps
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering