Understanding of BTI for tunnel FETs

W. Mizubayashi, T. Mori, K. Fukuda, Y. Ishikawa, Y. Morita, S. Migita, H. Ota, Y. X. Liu, S. O'Uchi, J. Tsukada, H. Yamauchi, T. Matsukawa, M. Masahara, K. Endo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We systematically investigated the NBTI degradation of Si-channel p-type tunnel FETs (pTFETs). The NBTI degradation mechanism of pTFETs is almost the same as that of pFETs. It was clarified that the NBTI degradation of pTFETs is only caused by the trap charge and the interface state degradation located in the tunneling region near the n+ source/gate edge. Furthermore, in terms of the BTI degradation of n-and p-type TFETs, although the injection sources of carriers inducing PBTI and NBTI are different, applying a drain bias corresponding to the operation conditions has an effect on the BTI lifetime improvement of n-and p-type TFETs.

Original languageEnglish
Title of host publication2015 IEEE International Electron Devices Meeting, IEDM 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages14.3.1-14.3.4
ISBN (Electronic)9781467398930
DOIs
Publication statusPublished - 2015 Feb 16
Externally publishedYes
Event61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
Duration: 2015 Dec 72015 Dec 9

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2016-February
ISSN (Print)0163-1918

Other

Other61st IEEE International Electron Devices Meeting, IEDM 2015
CountryUnited States
CityWashington
Period15/12/715/12/9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Understanding of BTI for tunnel FETs'. Together they form a unique fingerprint.

Cite this