Understanding crystal growth mechanisms in silicon-germanium (SiGe) nanostructures

M. Suemitsu, S. N. Filimonov

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Citations (Scopus)

Abstract

This chapter recalls some basic concepts required for understanding crystal growth. Thermodynamics and kinetics of the crystallization process are considered and an atomistic picture of the fundamental surface processes is given. Basic mechanisms of kinetic growth instabilities in epitaxial growth are described. Finally, an overview of the strain relaxation mechanism in heteroepitaxial growth is given using the Ge/Si(111) and Ge/Si(001) systems as an example.

Original languageEnglish
Title of host publicationSilicon-Germanium (SiGe) Nanostructures
PublisherElsevier Ltd
Pages45-71
Number of pages27
ISBN (Print)9781845696894
DOIs
Publication statusPublished - 2011 Feb

Keywords

  • Island nucleation
  • Kinetic growth instabilities
  • Strain relaxation in heteroepitaxial growth
  • Supersaturation
  • Surface diffusion

ASJC Scopus subject areas

  • Materials Science(all)

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