Understanding contact behavior in organic thin film transistors

S. D. Wang, Y. Yan, K. Tsukagoshi

Research output: Contribution to journalArticle

65 Citations (Scopus)

Abstract

We report the crowding current modeling of contact resistance in organic thin film transistors, and interpret the contact behavior based on the model. For the top-contact configuration, the contact resistance is determined by the transport property of both organic bulk and charge accumulation layer close to the organic/dielectric interface. For the bottom-contact configuration, the contact resistance is mainly determined by the transport property of organic bulk. In the both cases, reducing the charge traps in the organic active layer is considered as the essential approach to good contacts for organic thin film transistors.

Original languageEnglish
Article number063307
JournalApplied Physics Letters
Volume97
Issue number6
DOIs
Publication statusPublished - 2010 Aug 9
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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