Unconventional electronic structure of silicene on Ag/H-Si(111)

K. Sugawara, E. Noguchi, T. Sato, T. Takahashi

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We fabricated monolayer silicene on a thin silver (Ag) crystal film grown on hydrogen-terminated Si(111), and studied the crystal and the electronic structure by low-energy electron diffraction (LEED) and high-resolution angle-resolved photoemission spectroscopy (ARPES). The fabricated sample exhibits the 3 × 3 LEED pattern characteristic of silicene and the band dispersions with the periodicity of the silicene Brillouin zone, indicative of successful fabrication of silicene on Ag/H-Si(111). However, we observed no signature for the Dirac-cone state at the K point, while the observed band structure exhibits an unexpected van-Hove singularity with a saddle point at the binding energy of 1 eV. Such a singularity has not been reproduced in so-far existing band structure calculations, requesting sophisticated calculations incorporating the complicated strong hybridization between silicene and Ag orbitals.

Original languageEnglish
Pages (from-to)41-44
Number of pages4
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume219
DOIs
Publication statusPublished - 2017 Aug

Keywords

  • 2D materials
  • ARPES
  • Electronic state
  • Silicene
  • Van-Hove singularity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

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