Ultraviolet photoluminescence from CuAlS2 heteroepitaxial layers grownby low-pressure metalorganic chemical vapor deposition

Shigefusa Chichibu, Hisayuki Nakanishi, Sho Shirakata

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21 Citations (Scopus)

Abstract

Photoluminescence (PL) studies were carried out on CuAlS2 heteroepitaxial layers grown by low-pressure metalorganic chemical vapor deposition. The epilayers exhibited an intense near-band-edge PL peak at 3.525 eV (77 K) in the ultraviolet (UV) wavelength region together with PL bands at 2.76 and 2.1 eV. This near-band-edge PL peak showed the following properties: (i) the PL was strongly polarized parallel to the c axis, (ii) the peak energy varied from 3.497 to 3.525 eV at 77 K with increasing epilayer thickness from 0.49 to 0.67 μm, and (iii) the emission was observed up to room temperature. This UV-PL was tentatively assigned to an exciton-related emission, energy shifted due to the residual lattice strain.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
DOIs
Publication statusPublished - 1995 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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