Ultrathin Bismuth Film on 1T-TaS2: Structural Transition and Charge-Density-Wave Proximity Effect

Keiko Yamada, Seigo Souma, Kunihiko Yamauchi, Natsumi Shimamura, Katsuaki Sugawara, Chi Xuan Trang, Tamio Oguchi, Keiji Ueno, Takashi Takahashi, Takafumi Sato

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


We have fabricated bismuth (Bi) ultrathin films on a charge-density-wave (CDW) compound 1T-TaS2 and elucidated electronic states by angle-resolved photoemission spectroscopy and first-principles band-structure calculations. We found that the Bi film on 1T-TaS2 undergoes a structural transition from (111) to (110) upon reducing the film thickness, accompanied by a drastic change in the energy band structure. We also revealed that while two-bilayer-thick Bi(110) film on Si(111) is characterized by a dispersive band touching the Fermi level (EF), the energy band of the same film on 1T-TaS2 exhibits holelike dispersion with a finite energy gap at EF. We discuss the origin of such intriguing differences in terms of the CDW proximity effect.

Original languageEnglish
Pages (from-to)3235-3240
Number of pages6
JournalNano Letters
Issue number5
Publication statusPublished - 2018 May 9


  • Charge density wave
  • Rashba metal
  • band structure
  • photoemission spectroscopy
  • ultrathin film

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering


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