Abstract
We prepared TlInGaAsN/TlInP quantum well structures using gas source molecular-beam epitaxy and characterized them by means of transmission electron microscopy and scanning transmission electron microscopy. It was found that naturally formed vertical quantum wells, so-called lateral composition modulation (LCM), with a periodicity of ∼1 nm are formed in TlInGaAsN layers. We discuss their formation process using a simple kinetic Ising model for layer-by-layer growth, and point out that the formation of ultrashort-period LCM is a universal phenomenon in most of epitaxially grown III-V semiconductor alloys.
Original language | English |
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Article number | 153103 |
Journal | Applied Physics Letters |
Volume | 94 |
Issue number | 15 |
DOIs | |
Publication status | Published - 2009 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)