Ultrashort-period lateral composition modulation in TlInGaAsN/TlInP structures

Manabu Ishimaru; Yuusuke Tanaka; Shigehiko Hasegawa; Hajime Asahi; Kazuhisa Sato; Toyohiko J. Konno

doi:10.1063/1.3117507

Ultrashort-period lateral composition modulation in TlInGaAsN/TlInP structures

Manabu Ishimaru, Yuusuke Tanaka, Shigehiko Hasegawa, Hajime Asahi, Kazuhisa Sato, Toyohiko J. Konno

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We prepared TlInGaAsN/TlInP quantum well structures using gas source molecular-beam epitaxy and characterized them by means of transmission electron microscopy and scanning transmission electron microscopy. It was found that naturally formed vertical quantum wells, so-called lateral composition modulation (LCM), with a periodicity of ∼1 nm are formed in TlInGaAsN layers. We discuss their formation process using a simple kinetic Ising model for layer-by-layer growth, and point out that the formation of ultrashort-period LCM is a universal phenomenon in most of epitaxially grown III-V semiconductor alloys.

Original language	English
Article number	153103
Journal	Applied Physics Letters
Volume	94
Issue number	15
DOIs	https://doi.org/10.1063/1.3117507
Publication status	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We prepared TlInGaAsN/TlInP quantum well structures using gas source molecular-beam epitaxy and characterized them by means of transmission electron microscopy and scanning transmission electron microscopy. It was found that naturally formed vertical quantum wells, so-called lateral composition modulation (LCM), with a periodicity of ∼1 nm are formed in TlInGaAsN layers. We discuss their formation process using a simple kinetic Ising model for layer-by-layer growth, and point out that the formation of ultrashort-period LCM is a universal phenomenon in most of epitaxially grown III-V semiconductor alloys.",

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T1 - Ultrashort-period lateral composition modulation in TlInGaAsN/TlInP structures

AU - Ishimaru, Manabu

AU - Tanaka, Yuusuke

AU - Hasegawa, Shigehiko

AU - Asahi, Hajime

AU - Sato, Kazuhisa

AU - Konno, Toyohiko J.

PY - 2009

Y1 - 2009

N2 - We prepared TlInGaAsN/TlInP quantum well structures using gas source molecular-beam epitaxy and characterized them by means of transmission electron microscopy and scanning transmission electron microscopy. It was found that naturally formed vertical quantum wells, so-called lateral composition modulation (LCM), with a periodicity of ∼1 nm are formed in TlInGaAsN layers. We discuss their formation process using a simple kinetic Ising model for layer-by-layer growth, and point out that the formation of ultrashort-period LCM is a universal phenomenon in most of epitaxially grown III-V semiconductor alloys.

AB - We prepared TlInGaAsN/TlInP quantum well structures using gas source molecular-beam epitaxy and characterized them by means of transmission electron microscopy and scanning transmission electron microscopy. It was found that naturally formed vertical quantum wells, so-called lateral composition modulation (LCM), with a periodicity of ∼1 nm are formed in TlInGaAsN layers. We discuss their formation process using a simple kinetic Ising model for layer-by-layer growth, and point out that the formation of ultrashort-period LCM is a universal phenomenon in most of epitaxially grown III-V semiconductor alloys.

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