Ultrashallow Junction Formation Using Low-Temperature Selective S i 1-x G e x Chemical Vapor Deposition

Fumitaka Honma, Junichi Murota, Kinya Goto, Takahiro Maeda, Yasuji Sawada

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6 Citations (Scopus)


In situ B doping and selective epitaxy on Si at 550° C in Si1- x Ge x chemical vapor deposition (CVD) have been investigated for forming high-performance ultrashallow junctions. It was found that the incorporation rate of B increased proportionally with increasing B2H6 partial pressure, and was higher for the film with a higher Ge fraction x. Using Si3N4, thermal SiO2, phosphosilicate glass (PSG) and borophosphosilicate glass (BPSG) as mask film materials, about 40-nm-, 100-nm-, 150-nm- and 150-nm-thick B-doped Si0.5Ge0.5 films, respectively, were grown selectively on Si(100). Using this low-temperature selective Si1- x Ge x CVD, a high-performance self-aligned ultrashallow junction formation has been achieved with a very low reverse current density, in the range of 10-10 A/cm2, without heat treatment.

Original languageEnglish
Number of pages1
JournalJapanese journal of applied physics
Issue number4S
Publication statusPublished - 1994 Apr

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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