Ultrashallow junction formation in sub-0.1 μm metal oxide semiconductor field effect transistor (MOSFET) fabrication has been focused on as a key process technology. In this work, the arsenic (As) doping method, with rapid thermal annealing of the As-adsorbed layer with a capping oxide, was investigated for the first time as a technique for shallow junction formation. The As-adsorbed layer is successfully fabricated by AsH3 injection into the gas-source molecular beam epitaxy (GSMBE) apparatus. As-layer doping provides an extremely shallow junction (Xj: 20 nm) with a low sheet resistance (below 2kΩ/sq), thus proving to be a superior technique for shallow junction formation in the source/drain extension region of N-channel MOSFETs.
|Number of pages||5|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Publication status||Published - 2000 Jan|
ASJC Scopus subject areas
- Physics and Astronomy(all)