Ultrashallow junction formation by rapid thermal annealing of arsenic-adsorbed layer

Yun Heub Song, Ki Tae Park, Hiroyuki Kurino, Mitsumasa Koyanagi

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Ultrashallow junction formation in sub-0.1 μm metal oxide semiconductor field effect transistor (MOSFET) fabrication has been focused on as a key process technology. In this work, the arsenic (As) doping method, with rapid thermal annealing of the As-adsorbed layer with a capping oxide, was investigated for the first time as a technique for shallow junction formation. The As-adsorbed layer is successfully fabricated by AsH3 injection into the gas-source molecular beam epitaxy (GSMBE) apparatus. As-layer doping provides an extremely shallow junction (Xj: 20 nm) with a low sheet resistance (below 2kΩ/sq), thus proving to be a superior technique for shallow junction formation in the source/drain extension region of N-channel MOSFETs.

Original languageEnglish
Pages (from-to)26-30
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number1
DOIs
Publication statusPublished - 2000 Jan

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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