Abstract
When the gate length (Lg) of modulation-doped field-effect transistors (MODFETs) is reduced to deep sub-0.1-μm range in pursuit of higher speed, it is most important to simultaneously reduce the gate-to-channel separation. The resulting high aspect ratio alleviates both the reduction of transconductance (gm) resulting from drain-induced barrier lowering and the shift of threshold voltage (Vth). While the former point is essential for ultrahigh-speed ICs, the latter is the key to implementing enhancement-mode MODFET (E-MODFET). However, the high aspect ratio is difficult to attain due to the enlarged side etching of gate grooves during recess etching, which leads to higher parasitic resistance.
Original language | English |
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Pages | 150-151 |
Number of pages | 2 |
Publication status | Published - 1999 Dec 1 |
Externally published | Yes |
Event | Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA Duration: 1999 Jun 28 → 1999 Jun 30 |
Other
Other | Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) |
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City | Santa Barbara, CA, USA |
Period | 99/6/28 → 99/6/30 |
ASJC Scopus subject areas
- Engineering(all)