Ultrahigh-speed InP-based D- and E-mode MODFETs with ultra-short electrochemically-recessed gate contacts

D. Xu, T. Suemitsu, J. Osaka, Y. Umeda, Y. Yamane, Y. Ishii, T. Ishii, T. Tamamura

Research output: Contribution to conferencePaperpeer-review

Abstract

When the gate length (Lg) of modulation-doped field-effect transistors (MODFETs) is reduced to deep sub-0.1-μm range in pursuit of higher speed, it is most important to simultaneously reduce the gate-to-channel separation. The resulting high aspect ratio alleviates both the reduction of transconductance (gm) resulting from drain-induced barrier lowering and the shift of threshold voltage (Vth). While the former point is essential for ultrahigh-speed ICs, the latter is the key to implementing enhancement-mode MODFET (E-MODFET). However, the high aspect ratio is difficult to attain due to the enlarged side etching of gate grooves during recess etching, which leads to higher parasitic resistance.

Original languageEnglish
Pages150-151
Number of pages2
Publication statusPublished - 1999 Dec 1
Externally publishedYes
EventProceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA
Duration: 1999 Jun 281999 Jun 30

Other

OtherProceedings of the 1999 57th Annual Device Research Conference Digest (DRC)
CitySanta Barbara, CA, USA
Period99/6/2899/6/30

ASJC Scopus subject areas

  • Engineering(all)

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