Ultrahigh-speed InP-based D- and E-mode MODFETs with ultra-short electrochemically-recessed gate contacts

D. Xu; T. Suemitsu; J. Osaka; Y. Umeda; Y. Yamane; Y. Ishii; T. Ishii; T. Tamamura

Ultrahigh-speed InP-based D- and E-mode MODFETs with ultra-short electrochemically-recessed gate contacts

D. Xu, T. Suemitsu, J. Osaka, Y. Umeda, Y. Yamane, Y. Ishii, T. Ishii, T. Tamamura

Research output: Contribution to conference › Paper › peer-review

Abstract

When the gate length (L_g) of modulation-doped field-effect transistors (MODFETs) is reduced to deep sub-0.1-μm range in pursuit of higher speed, it is most important to simultaneously reduce the gate-to-channel separation. The resulting high aspect ratio alleviates both the reduction of transconductance (g_m) resulting from drain-induced barrier lowering and the shift of threshold voltage (V_th). While the former point is essential for ultrahigh-speed ICs, the latter is the key to implementing enhancement-mode MODFET (E-MODFET). However, the high aspect ratio is difficult to attain due to the enlarged side etching of gate grooves during recess etching, which leads to higher parasitic resistance.

Original language	English
Pages	150-151
Number of pages	2
Publication status	Published - 1999 Dec 1
Externally published	Yes
Event	Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA Duration: 1999 Jun 28 → 1999 Jun 30

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Other	Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC)
City	Santa Barbara, CA, USA
Period	99/6/28 → 99/6/30

ASJC Scopus subject areas

Engineering(all)

Cite this

Ultrahigh-speed InP-based D- and E-mode MODFETs with ultra-short electrochemically-recessed gate contacts. / Xu, D.; Suemitsu, T.; Osaka, J.; Umeda, Y.; Yamane, Y.; Ishii, Y.; Ishii, T.; Tamamura, T.

1999. 150-151 Paper presented at Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC), Santa Barbara, CA, USA.

Research output: Contribution to conference › Paper › peer-review

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abstract = "When the gate length (Lg) of modulation-doped field-effect transistors (MODFETs) is reduced to deep sub-0.1-μm range in pursuit of higher speed, it is most important to simultaneously reduce the gate-to-channel separation. The resulting high aspect ratio alleviates both the reduction of transconductance (gm) resulting from drain-induced barrier lowering and the shift of threshold voltage (Vth). While the former point is essential for ultrahigh-speed ICs, the latter is the key to implementing enhancement-mode MODFET (E-MODFET). However, the high aspect ratio is difficult to attain due to the enlarged side etching of gate grooves during recess etching, which leads to higher parasitic resistance.",

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AU - Xu, D.

AU - Suemitsu, T.

AU - Osaka, J.

AU - Umeda, Y.

AU - Yamane, Y.

AU - Ishii, Y.

AU - Ishii, T.

AU - Tamamura, T.

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AB - When the gate length (Lg) of modulation-doped field-effect transistors (MODFETs) is reduced to deep sub-0.1-μm range in pursuit of higher speed, it is most important to simultaneously reduce the gate-to-channel separation. The resulting high aspect ratio alleviates both the reduction of transconductance (gm) resulting from drain-induced barrier lowering and the shift of threshold voltage (Vth). While the former point is essential for ultrahigh-speed ICs, the latter is the key to implementing enhancement-mode MODFET (E-MODFET). However, the high aspect ratio is difficult to attain due to the enlarged side etching of gate grooves during recess etching, which leads to higher parasitic resistance.

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Ultrahigh-speed InP-based D- and E-mode MODFETs with ultra-short electrochemically-recessed gate contacts

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