Ultrahigh sensitive sub- Terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics

Y. Kurita, G. Ducoumau, D. Coquillat, A. Satou, K. Kobayashi, S. Boubanga Tombet, Y. M. Meziani, V. V. Popov, W. Knap, T. Suemitsu, T. Otsuji

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62 Citations (Scopus)

Abstract

We report on room- Temperature plasmonic detection of sub- Terahertz radiation by InAlAs/InGaAs/ InP high electron mobility transistors with an asymmetric dual-grating-gate structure. Maximum responsivities of 22.7 kV/W at 200GHz and 21.5 kV/W at 292 GHz were achieved under unbiased drain- To-source condition. The minimum noise equivalent power was estimated to be 0.48 pW/Hz°5 at 200GHz at room temperature, which is the record-breaking value ever reported for plasmonic THz detectors. Frequency dependence of the responsivity in the frequency range of 0.2-2 THz is in good agreement with the theory.

Original languageEnglish
Article number251114
JournalApplied Physics Letters
Volume104
Issue number25
DOIs
Publication statusPublished - 2014 Jun 23

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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