Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure

Takayuki Watanabe, Stephane Boubanga Tombet, Yudai Tanimoto, Yuye Wang, Hiroaki Minamide, Hiromasa Ito, Denis Fateev, Viacheslav Popov, Dominique Coquillat, Wojciech Knap, Yahya Meziani, Taiichi Otsuji

Research output: Contribution to journalArticlepeer-review

63 Citations (Scopus)


We report on ultrahigh sensitive, broadband terahertz (THz) detectors based on asymmetric dual-grating-gate (A-DGG) high electron mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz with a superior low noise equivalent power of 15 pW/√Hz using InGaAs/InAlAs/InP material systems. When THz radiation is absorbed strong THz photocurrent is first generated by the nonlinearity of the plasmon modes resonantly excited in undepleted portions of the 2D electron channel under the high-biased sub-grating of the A-DGG (as a quadratic nature of the product of local carrier density and velocity perturbations), then the THz photovoltaic response is read out at high-impedance parts of 2D channel under the other sub-grating biased at the level close to the threshold. Extraordinary enhancement by more than two orders of magnitude of the responsivity is verified with respect to that for a symmetric DGG structure. front matter

Original languageEnglish
Pages (from-to)109-114
Number of pages6
JournalSolid-State Electronics
Publication statusPublished - 2012 Dec


  • Asymmetry
  • Detector
  • Grating
  • HEMT
  • Plasmon
  • Terahertz

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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