Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure

Takayuki Watanabe, Stephane Boubanba Tombet, Yudai Tanimoto, Yuye Wang, Hiroaki Minamide, Hiromasa Ito, Denis Fateev, Viacheslav Popov, Dominique Coquillat, Wojciech Knap, Taiichi Otsuji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We report on ultrahigh sensitive, broadband terahertz (THz) detectors based on asymmetric double-grating-gate (A-DGG) HEMTs demonstrating a record responsivity of 2.2 kV/W at 1 THz. Hydrodynamic nonlinearities of two-dimensional (2D) plasmons in high-electron-mobility transistors (HEMTs) are promising for fast and sensitive rectification/detection of THz radiation [1], which can be applied to real-time THz imaging/spectroscopic analysis and future THz wireless communications [2]. Recently, InP- and GaN-based HEMTs as well as Si-MOSFETs have demonstrated improved responsivities [3,4], approaching 1 kV/W at 1 THz by introducing narrow-band dipole antenna structure merged with the gate electrode [3].

Original languageEnglish
Title of host publication2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs
Publication statusPublished - 2011 Dec 1
Event2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States
Duration: 2011 Dec 72011 Dec 9

Publication series

Name2011 International Semiconductor Device Research Symposium, ISDRS 2011

Other

Other2011 International Semiconductor Device Research Symposium, ISDRS 2011
CountryUnited States
CityCollege Park, MD
Period11/12/711/12/9

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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