Ultrahigh room-temperature hole Hall and effective mobility in Si 0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures

T. Irisawa; S. Tokumitsu; T. Hattori; K. Nakagawa; S. Koh; Y. Shiraki

doi:10.1063/1.1497725

Ultrahigh room-temperature hole Hall and effective mobility in Si _0.3Ge_0.7/Ge/Si_0.3Ge_0.7 heterostructures

T. Irisawa, S. Tokumitsu, T. Hattori, K. Nakagawa, S. Koh, Y. Shiraki

Research output: Contribution to journal › Article › peer-review

90 Citations (Scopus)

Abstract

We have obtained ultrahigh room-temperature (RT) hole Hall and effective mobility in Si_0.3Ge_0.7/Ge/Si_0.3Ge_0.7 heterostructures with very small parallel conduction. Reducing parallel conduction was achieved by employing Sb doping in Si_0.3Ge _0.7 buffer layers, which drastically increased RT hole Hall mobility up to 2100 cm²/Vs in the strained Ge channel modulation-doped structures and improved device characteristics of the p-type metal-oxide-semiconductor field-effect transistors with the strained Ge channel. The peak effective mobility reached to 2700 cm²/Vs at RT, which was much higher than the bulk Ge drift mobility.

Original language	English
Pages (from-to)	847-849
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	5
DOIs	https://doi.org/10.1063/1.1497725
Publication status	Published - 2002 Jul 29

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We have obtained ultrahigh room-temperature (RT) hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures with very small parallel conduction. Reducing parallel conduction was achieved by employing Sb doping in Si0.3Ge 0.7 buffer layers, which drastically increased RT hole Hall mobility up to 2100 cm2/Vs in the strained Ge channel modulation-doped structures and improved device characteristics of the p-type metal-oxide-semiconductor field-effect transistors with the strained Ge channel. The peak effective mobility reached to 2700 cm2/Vs at RT, which was much higher than the bulk Ge drift mobility.",

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AU - Irisawa, T.

AU - Tokumitsu, S.

AU - Hattori, T.

AU - Nakagawa, K.

AU - Koh, S.

AU - Shiraki, Y.

PY - 2002/7/29

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AB - We have obtained ultrahigh room-temperature (RT) hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures with very small parallel conduction. Reducing parallel conduction was achieved by employing Sb doping in Si0.3Ge 0.7 buffer layers, which drastically increased RT hole Hall mobility up to 2100 cm2/Vs in the strained Ge channel modulation-doped structures and improved device characteristics of the p-type metal-oxide-semiconductor field-effect transistors with the strained Ge channel. The peak effective mobility reached to 2700 cm2/Vs at RT, which was much higher than the bulk Ge drift mobility.

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Ultrahigh room-temperature hole Hall and effective mobility in Si _0.3Ge_0.7/Ge/Si_0.3Ge_0.7 heterostructures

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