We have obtained ultrahigh room-temperature (RT) hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures with very small parallel conduction. Reducing parallel conduction was achieved by employing Sb doping in Si0.3Ge 0.7 buffer layers, which drastically increased RT hole Hall mobility up to 2100 cm2/Vs in the strained Ge channel modulation-doped structures and improved device characteristics of the p-type metal-oxide-semiconductor field-effect transistors with the strained Ge channel. The peak effective mobility reached to 2700 cm2/Vs at RT, which was much higher than the bulk Ge drift mobility.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)