Ultrahigh-aspect-ratio SiO2 deeply etched periodic structures with smooth surfaces for photonics applications

K. Hosomi, T. Kikawa, S. Goto, H. Yamada, T. Katsuyama, Y. Arakawa

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

One-dimensional Si O2 deeply etched periodic structures were fabricated. The fabrication process was based on an anisotropic Si etching, followed by a direct oxidation of the etched Si structure. The obtained submicron-scale Si O2 periodic structure had an ultrahigh aspect ratio of 16 for the etched space and an etching depth of as large as 12.5 μm. The etched depth was limited only by the etching mask. Therefore, increasing the mask thickness, or replacing it with a much harder mask material, should result in a much larger aspect ratio and etching depth. This structure also had an excellent vertical profile of less than 0.5° and extremely smooth surfaces of only 0.6 nm rms suitable for use in various applications, particularly in photonics fields that require a broad band performance, ranging from ultraviolet to near infrared.

Original languageEnglish
Pages (from-to)1226-1229
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume24
Issue number3
DOIs
Publication statusPublished - 2006 May 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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