Ultrahigh-aspect-ratio Si and SiO2 deeply-etched periodic structures with extremely smooth surfaces for photonics applications

K. Hosomi, H. Yamada, T. Kikawa, S. Goto, T. Katsuyama, Y. Arakawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

One-dimensional deeply-etched periodic Si and SiO2 structures were fabricated and had excellent vertical profiles (<0.5 deg.), ultrahigh aspect ratios (∼80) and large etch depths (∼20 μm). Low scattering optical loss can be expected by their extremely smooth surfaces.

Original languageEnglish
Title of host publication2005 IEEE International Conference on Group IV Photonics
Pages140-142
Number of pages3
DOIs
Publication statusPublished - 2005
Event2005 IEEE International Conference on Group IV Photonics - Antwerp, Belgium
Duration: 2005 Sep 212005 Sep 23

Publication series

Name2005 IEEE International Conference on Group IV Photonics
Volume2005

Other

Other2005 IEEE International Conference on Group IV Photonics
CountryBelgium
CityAntwerp
Period05/9/2105/9/23

ASJC Scopus subject areas

  • Engineering(all)

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