Ultrafast spontaneous emission: Exciton radiative decay vs phonon scattering and disorder

E. A. Muljarov, Teruya Ishihara, S. G. Tikhodeev

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1 Citation (Scopus)


A theory of the exciton spontaneous emission from a semiconductor slab with strong exciton-photon interaction is developed. The limit of the radiative decay rate G large compared to the exciton-phonon scattering rate g is studied for the first time. It is shown that simultaneous account for the structural disorder and exciton-acoustic phonon scattering results in a two-exponential photoluminescence decay under off-resonant pulse excitation. In a well-organized structure (weak disorder), the fast component determined by G can lead to ultrafast photoluminescence decay with the lifetime of tens of fs. In a strongly disordered structure the decay turns out to be one-exponential and independent of G, in accordance with recent experimental results.

Original languageEnglish
Pages (from-to)1421-1424
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number5
Publication statusPublished - 2003
Externally publishedYes
Event7th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors, NOEKS 2003 - Karlsruhe, Germany
Duration: 2003 Feb 242003 Feb 28

ASJC Scopus subject areas

  • Condensed Matter Physics


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