A theory of the exciton spontaneous emission from a semiconductor slab with strong exciton-photon interaction is developed. The limit of the radiative decay rate G large compared to the exciton-phonon scattering rate g is studied for the first time. It is shown that simultaneous account for the structural disorder and exciton-acoustic phonon scattering results in a two-exponential photoluminescence decay under off-resonant pulse excitation. In a well-organized structure (weak disorder), the fast component determined by G can lead to ultrafast photoluminescence decay with the lifetime of tens of fs. In a strongly disordered structure the decay turns out to be one-exponential and independent of G, in accordance with recent experimental results.
|Number of pages||4|
|Journal||Physica Status Solidi C: Conferences|
|Publication status||Published - 2003 Dec 1|
|Event||7th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors, NOEKS 2003 - Karlsruhe, Germany|
Duration: 2003 Feb 24 → 2003 Feb 28
ASJC Scopus subject areas
- Condensed Matter Physics