Ultrafast optoelectronic time-division demultiplexer IC using resonant tunneling diodes and a unitraveling-carrier photodiode

Kimikazu Sano; Koichi Murata; Tomoyuki Akeyoshi; Naofumi Shimizu; Taiichi Otsuji; Jiro Osaka; Eiichi Sano

doi:10.1109/cleo.1998.676545

Ultrafast optoelectronic time-division demultiplexer IC using resonant tunneling diodes and a unitraveling-carrier photodiode

Kimikazu Sano, Koichi Murata, Tomoyuki Akeyoshi, Naofumi Shimizu, Taiichi Otsuji, Jiro Osaka, Eiichi Sano

Research output: Contribution to conference › Paper › peer-review

3 Citations (Scopus)

Abstract

An ultrafast optoelectronic time-division demultiplexer IC using only two resonant-tunneling diodes (RTDs) and one unitraveling-carrier photodiode (UTC-PD) is proposed. Use of this circuit enabled successful fabrication of monolithically demultiplexed an 80-Gbit/s optical signal into a 40-Gbit/s electrical signal with a power consumption of 7.75 mW.

Original language	English
Pages	499-500
Number of pages	2
DOIs	https://doi.org/10.1109/cleo.1998.676545
Publication status	Published - 1998 Jan 1
Externally published	Yes
Event	Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO - San Francisco, CA, USA Duration: 1998 May 3 → 1998 May 8

Other

Other	Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO
City	San Francisco, CA, USA
Period	98/5/3 → 98/5/8

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

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10.1109/cleo.1998.676545

Cite this

Sano, K., Murata, K., Akeyoshi, T., Shimizu, N., Otsuji, T., Osaka, J., & Sano, E. (1998). Ultrafast optoelectronic time-division demultiplexer IC using resonant tunneling diodes and a unitraveling-carrier photodiode. 499-500. Paper presented at Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO, San Francisco, CA, USA. https://doi.org/10.1109/cleo.1998.676545

Ultrafast optoelectronic time-division demultiplexer IC using resonant tunneling diodes and a unitraveling-carrier photodiode. / Sano, Kimikazu; Murata, Koichi; Akeyoshi, Tomoyuki et al.

1998. 499-500 Paper presented at Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO, San Francisco, CA, USA.

Research output: Contribution to conference › Paper › peer-review

Sano, K, Murata, K, Akeyoshi, T, Shimizu, N, Otsuji, T, Osaka, J & Sano, E 1998, 'Ultrafast optoelectronic time-division demultiplexer IC using resonant tunneling diodes and a unitraveling-carrier photodiode', Paper presented at Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO, San Francisco, CA, USA, 98/5/3 - 98/5/8 pp. 499-500. https://doi.org/10.1109/cleo.1998.676545

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AU - Shimizu, Naofumi

AU - Otsuji, Taiichi

AU - Osaka, Jiro

AU - Sano, Eiichi

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AB - An ultrafast optoelectronic time-division demultiplexer IC using only two resonant-tunneling diodes (RTDs) and one unitraveling-carrier photodiode (UTC-PD) is proposed. Use of this circuit enabled successful fabrication of monolithically demultiplexed an 80-Gbit/s optical signal into a 40-Gbit/s electrical signal with a power consumption of 7.75 mW.

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ER -

Ultrafast optoelectronic time-division demultiplexer IC using resonant tunneling diodes and a unitraveling-carrier photodiode

Abstract

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