Ultrafast dynamics in photoexcited valence-band states of Si studied by time- and angle-resolved photoemission spectroscopy of bulk direct transitions

Jun'Ichi Kanasaki; Hiroshi Tanimura; Katsumi Tanimura; Philip Ries; Wolfgang Heckel; Kerstin Biedermann; Thomas Fauster

doi:10.1103/PhysRevB.97.035201

Ultrafast dynamics in photoexcited valence-band states of Si studied by time- and angle-resolved photoemission spectroscopy of bulk direct transitions

Jun'Ichi Kanasaki, Hiroshi Tanimura, Katsumi Tanimura, Philip Ries, Wolfgang Heckel, Kerstin Biedermann, Thomas Fauster

Materials Development Division

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We identify direct-transition photoemission peaks from the bulk valence bands of Si in energy- and momentum-resolved photoemission from Si(111)-(7×7) using polarized 6-eV laser light. Time-resolved study of spectral line shapes of the peaks under interband excitation by 2-eV femtosecond-laser pulses shows the ultrafast transient spectral-width broadening and its recovery associated with a low-energy peak shift. The changes reveal the dynamics of screening effects by electron-hole plasma, hot-hole relaxation, and band renormalization in photoexcited Si, showing strong many-body effects in relaxation at excitation density less than 1018cm-3.

Original language	English
Article number	035201
Journal	Physical Review B
Volume	97
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.97.035201
Publication status	Published - 2018 Jan 3

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.97.035201

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title = "Ultrafast dynamics in photoexcited valence-band states of Si studied by time- and angle-resolved photoemission spectroscopy of bulk direct transitions",

abstract = "We identify direct-transition photoemission peaks from the bulk valence bands of Si in energy- and momentum-resolved photoemission from Si(111)-(7×7) using polarized 6-eV laser light. Time-resolved study of spectral line shapes of the peaks under interband excitation by 2-eV femtosecond-laser pulses shows the ultrafast transient spectral-width broadening and its recovery associated with a low-energy peak shift. The changes reveal the dynamics of screening effects by electron-hole plasma, hot-hole relaxation, and band renormalization in photoexcited Si, showing strong many-body effects in relaxation at excitation density less than 1018cm-3.",

author = "Jun'Ichi Kanasaki and Hiroshi Tanimura and Katsumi Tanimura and Philip Ries and Wolfgang Heckel and Kerstin Biedermann and Thomas Fauster",

note = "Funding Information: This work was supported by JSPS KAKENHI Grant No. 24000006. Publisher Copyright: {\textcopyright} 2018 American Physical Society.",

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T1 - Ultrafast dynamics in photoexcited valence-band states of Si studied by time- and angle-resolved photoemission spectroscopy of bulk direct transitions

AU - Kanasaki, Jun'Ichi

AU - Tanimura, Hiroshi

AU - Tanimura, Katsumi

AU - Ries, Philip

AU - Heckel, Wolfgang

AU - Biedermann, Kerstin

AU - Fauster, Thomas

PY - 2018/1/3

Y1 - 2018/1/3

N2 - We identify direct-transition photoemission peaks from the bulk valence bands of Si in energy- and momentum-resolved photoemission from Si(111)-(7×7) using polarized 6-eV laser light. Time-resolved study of spectral line shapes of the peaks under interband excitation by 2-eV femtosecond-laser pulses shows the ultrafast transient spectral-width broadening and its recovery associated with a low-energy peak shift. The changes reveal the dynamics of screening effects by electron-hole plasma, hot-hole relaxation, and band renormalization in photoexcited Si, showing strong many-body effects in relaxation at excitation density less than 1018cm-3.

AB - We identify direct-transition photoemission peaks from the bulk valence bands of Si in energy- and momentum-resolved photoemission from Si(111)-(7×7) using polarized 6-eV laser light. Time-resolved study of spectral line shapes of the peaks under interband excitation by 2-eV femtosecond-laser pulses shows the ultrafast transient spectral-width broadening and its recovery associated with a low-energy peak shift. The changes reveal the dynamics of screening effects by electron-hole plasma, hot-hole relaxation, and band renormalization in photoexcited Si, showing strong many-body effects in relaxation at excitation density less than 1018cm-3.

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Ultrafast dynamics in photoexcited valence-band states of Si studied by time- and angle-resolved photoemission spectroscopy of bulk direct transitions

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