Ultrafast dynamics in photoexcited valence-band states of Si studied by time- and angle-resolved photoemission spectroscopy of bulk direct transitions

Jun'Ichi Kanasaki, Hiroshi Tanimura, Katsumi Tanimura, Philip Ries, Wolfgang Heckel, Kerstin Biedermann, Thomas Fauster

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We identify direct-transition photoemission peaks from the bulk valence bands of Si in energy- and momentum-resolved photoemission from Si(111)-(7×7) using polarized 6-eV laser light. Time-resolved study of spectral line shapes of the peaks under interband excitation by 2-eV femtosecond-laser pulses shows the ultrafast transient spectral-width broadening and its recovery associated with a low-energy peak shift. The changes reveal the dynamics of screening effects by electron-hole plasma, hot-hole relaxation, and band renormalization in photoexcited Si, showing strong many-body effects in relaxation at excitation density less than 1018cm-3.

Original languageEnglish
Article number035201
JournalPhysical Review B
Volume97
Issue number3
DOIs
Publication statusPublished - 2018 Jan 3

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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