Ultrafast Carrier Capture and Auger Recombination in Single GaN/InGaN Multiple Quantum Well Nanowires

Stephane Boubanga-Tombet, Jeremy B. Wright, Ping Lu, Michael R.C. Williams, Changyi Li, George T. Wang, Rohit P. Prasankumar

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

Ultrafast optical microscopy is an important tool for examining fundamental phenomena in semiconductor nanowires with high temporal and spatial resolution. Here, we used this technique to study carrier dynamics in single GaN/InGaN core-shell nonpolar multiple quantum well nanowires. We find that intraband carrier-carrier scattering is the main channel governing carrier capture, while subsequent carrier relaxation is dominated by three-carrier Auger recombination at higher densities and bimolecular recombination at lower densities. The Auger constants in these nanowires are approximately 2 orders of magnitude lower than in planar InGaN multiple quantum wells, highlighting their potential for future light-emitting devices.

Original languageEnglish
Pages (from-to)2237-2242
Number of pages6
JournalACS Photonics
Volume3
Issue number12
DOIs
Publication statusPublished - 2016 Dec 21

Keywords

  • Auger recombination
  • GaN/InGaN nanowires
  • carrier capture
  • ultrafast optical microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biotechnology
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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