Blanket B doped SiGe(C) and selective Si epitaxial growth using hot wall LPCVD system have been investigated. We achieved good B-doping uniformity of the SiGe(C) film using other doping, gas besides B2H6. The sheet resistance in-wafer uniformity in 200mm diameter wafer of the B-doped SiGe(C) was around 2 sigma %. The good epitaxial layer quality and the excellent thickness uniformity of the B-doped SiGe(C) film were recognized by high-resolution XRD. We also achieved selective Si growth up to 100nm for SiO2 and SiN patterned wafer using the high-throughput ultraclean hot-wall LPCVD system. The cross-sectional TEM image of selective-Si/Si(001)- substrate interface showed good epitaxial quality with no dislocation and stacking fault.
|Number of pages||7|
|Publication status||Published - 2004 Dec 1|
|Event||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States|
Duration: 2004 Oct 3 → 2004 Oct 8
|Other||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium|
|Period||04/10/3 → 04/10/8|
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