Ultraclean hot-wall LPCVD system application for blanket B-doped SiGe(C) and selective Si EPI

Yasuo Kunii; Yasuhiro Inokuchi; Atsushi Moriya; Harushige Kurokawa; Junichi Murota

Ultraclean hot-wall LPCVD system application for blanket B-doped SiGe(C) and selective Si EPI

Yasuo Kunii, Yasuhiro Inokuchi, Atsushi Moriya, Harushige Kurokawa, Junichi Murota

Research Institute of Electrical Communication (RIEC)

Research output: Contribution to conference › Paper › peer-review

Abstract

Blanket B doped SiGe(C) and selective Si epitaxial growth using hot wall LPCVD system have been investigated. We achieved good B-doping uniformity of the SiGe(C) film using other doping, gas besides B₂H₆. The sheet resistance in-wafer uniformity in 200mm diameter wafer of the B-doped SiGe(C) was around 2 sigma %. The good epitaxial layer quality and the excellent thickness uniformity of the B-doped SiGe(C) film were recognized by high-resolution XRD. We also achieved selective Si growth up to 100nm for SiO₂ and SiN patterned wafer using the high-throughput ultraclean hot-wall LPCVD system. The cross-sectional TEM image of selective-Si/Si(001)- substrate interface showed good epitaxial quality with no dislocation and stacking fault.

Original language	English
Pages	1087-1093
Number of pages	7
Publication status	Published - 2004 Dec 1
Event	SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States Duration: 2004 Oct 3 → 2004 Oct 8

Other

Other	SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
Country/Territory	United States
City	Honolulu, HI
Period	04/10/3 → 04/10/8

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "Ultraclean hot-wall LPCVD system application for blanket B-doped SiGe(C) and selective Si EPI",

abstract = "Blanket B doped SiGe(C) and selective Si epitaxial growth using hot wall LPCVD system have been investigated. We achieved good B-doping uniformity of the SiGe(C) film using other doping, gas besides B2H6. The sheet resistance in-wafer uniformity in 200mm diameter wafer of the B-doped SiGe(C) was around 2 sigma %. The good epitaxial layer quality and the excellent thickness uniformity of the B-doped SiGe(C) film were recognized by high-resolution XRD. We also achieved selective Si growth up to 100nm for SiO2 and SiN patterned wafer using the high-throughput ultraclean hot-wall LPCVD system. The cross-sectional TEM image of selective-Si/Si(001)- substrate interface showed good epitaxial quality with no dislocation and stacking fault.",

author = "Yasuo Kunii and Yasuhiro Inokuchi and Atsushi Moriya and Harushige Kurokawa and Junichi Murota",

year = "2004",

month = dec,

day = "1",

language = "English",

pages = "1087--1093",

note = "SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium ; Conference date: 03-10-2004 Through 08-10-2004",

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TY - CONF

T1 - Ultraclean hot-wall LPCVD system application for blanket B-doped SiGe(C) and selective Si EPI

AU - Kunii, Yasuo

AU - Inokuchi, Yasuhiro

AU - Moriya, Atsushi

AU - Kurokawa, Harushige

AU - Murota, Junichi

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Blanket B doped SiGe(C) and selective Si epitaxial growth using hot wall LPCVD system have been investigated. We achieved good B-doping uniformity of the SiGe(C) film using other doping, gas besides B2H6. The sheet resistance in-wafer uniformity in 200mm diameter wafer of the B-doped SiGe(C) was around 2 sigma %. The good epitaxial layer quality and the excellent thickness uniformity of the B-doped SiGe(C) film were recognized by high-resolution XRD. We also achieved selective Si growth up to 100nm for SiO2 and SiN patterned wafer using the high-throughput ultraclean hot-wall LPCVD system. The cross-sectional TEM image of selective-Si/Si(001)- substrate interface showed good epitaxial quality with no dislocation and stacking fault.

AB - Blanket B doped SiGe(C) and selective Si epitaxial growth using hot wall LPCVD system have been investigated. We achieved good B-doping uniformity of the SiGe(C) film using other doping, gas besides B2H6. The sheet resistance in-wafer uniformity in 200mm diameter wafer of the B-doped SiGe(C) was around 2 sigma %. The good epitaxial layer quality and the excellent thickness uniformity of the B-doped SiGe(C) film were recognized by high-resolution XRD. We also achieved selective Si growth up to 100nm for SiO2 and SiN patterned wafer using the high-throughput ultraclean hot-wall LPCVD system. The cross-sectional TEM image of selective-Si/Si(001)- substrate interface showed good epitaxial quality with no dislocation and stacking fault.

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M3 - Paper

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SP - 1087

EP - 1093

T2 - SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium

Y2 - 3 October 2004 through 8 October 2004

ER -

Ultraclean hot-wall LPCVD system application for blanket B-doped SiGe(C) and selective Si EPI

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