Ultraclean hot-wall LPCVD system application for blanket B-doped SiGe(C) and selective Si EPI

Yasuo Kunii, Yasuhiro Inokuchi, Atsushi Moriya, Harushige Kurokawa, Junichi Murota

Research output: Contribution to conferencePaperpeer-review

Abstract

Blanket B doped SiGe(C) and selective Si epitaxial growth using hot wall LPCVD system have been investigated. We achieved good B-doping uniformity of the SiGe(C) film using other doping, gas besides B2H6. The sheet resistance in-wafer uniformity in 200mm diameter wafer of the B-doped SiGe(C) was around 2 sigma %. The good epitaxial layer quality and the excellent thickness uniformity of the B-doped SiGe(C) film were recognized by high-resolution XRD. We also achieved selective Si growth up to 100nm for SiO2 and SiN patterned wafer using the high-throughput ultraclean hot-wall LPCVD system. The cross-sectional TEM image of selective-Si/Si(001)- substrate interface showed good epitaxial quality with no dislocation and stacking fault.

Original languageEnglish
Pages1087-1093
Number of pages7
Publication statusPublished - 2004 Dec 1
EventSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States
Duration: 2004 Oct 32004 Oct 8

Other

OtherSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
CountryUnited States
CityHonolulu, HI
Period04/10/304/10/8

ASJC Scopus subject areas

  • Engineering(all)

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