We have proposed ultra thin FD-SOIMOSFETs with buried back gate to control their threshold voltage. They have elevated S/D with Ni suicide to improve current drivability. In this work, we fabricated ultra thin FD-SOI PMOSFETs with buried back gate and successfully control their threshold voltage. We also studied the effect of ion implantation on surface morphology of Si selectively epitaxial growth to form elevated S/D.
|Number of pages||6|
|Publication status||Published - 2004 Dec 1|
|Event||3rd International Conference on Semiconductor Technology, ISTC2004 - Shanghai, China|
Duration: 2004 Sep 15 → 2004 Sep 17
|Other||3rd International Conference on Semiconductor Technology, ISTC2004|
|Period||04/9/15 → 04/9/17|
ASJC Scopus subject areas