Abstract
Low-temperature (290°C) area-selective re-growth (LT-ASR) by molecular layer epitaxy (MLE) was applied to the fabrication of ultra shallow (50 nm) sidewall GaAs tunnel junctions. As a result, these tunnel junctions have exhibited record peak current densities of up to 31,000 A/cm2 at RT, with a peak-to-valley current ratio of 2.1. It was also shown that the tunnel junction characteristics are strongly dependent on the sidewall mesa orientation. In order to investigate the midgap levels at the re-growth interface region, photocapacitance (PC) measurements were made on area-selective re-grown sidewall p+ i n+ junctions.
Original language | English |
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Pages (from-to) | e1085-e1089 |
Journal | Journal of Crystal Growth |
Volume | 275 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 2005 Feb 15 |
Keywords
- A1. Doping
- A1. Impurities
- A1. Interfaces
- A3. Atomic layer epitaxy
- A3. Selective epitaxy
- B2. Semiconducting gallium arsenide
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry