Ultra shallow sidewall GaAs tunnel junctions prepared by low-temperature area-selective epitaxial re-growth method

Yutaka Oyama, Takeo Ohno, Ken Suto, Jun Ichi Nishizawa

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)

Abstract

Low-temperature (290°C) area-selective re-growth (LT-ASR) by molecular layer epitaxy (MLE) was applied to the fabrication of ultra shallow (50 nm) sidewall GaAs tunnel junctions. As a result, these tunnel junctions have exhibited record peak current densities of up to 31,000 A/cm2 at RT, with a peak-to-valley current ratio of 2.1. It was also shown that the tunnel junction characteristics are strongly dependent on the sidewall mesa orientation. In order to investigate the midgap levels at the re-growth interface region, photocapacitance (PC) measurements were made on area-selective re-grown sidewall p+ i n+ junctions.

Original languageEnglish
Pages (from-to)e1085-e1089
JournalJournal of Crystal Growth
Volume275
Issue number1-2
DOIs
Publication statusPublished - 2005 Feb 15

Keywords

  • A1. Doping
  • A1. Impurities
  • A1. Interfaces
  • A3. Atomic layer epitaxy
  • A3. Selective epitaxy
  • B2. Semiconducting gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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