Ultra shallow sidewall GaAs tunnel junctions prepared by low-temperature area-selective epitaxial re-growth method

Yutaka Oyama; Takeo Ohno; Ken Suto; Jun Ichi Nishizawa

doi:10.1016/j.jcrysgro.2004.11.137

Ultra shallow sidewall GaAs tunnel junctions prepared by low-temperature area-selective epitaxial re-growth method

Yutaka Oyama, Takeo Ohno, Ken Suto, Jun Ichi Nishizawa

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

Low-temperature (290°C) area-selective re-growth (LT-ASR) by molecular layer epitaxy (MLE) was applied to the fabrication of ultra shallow (50 nm) sidewall GaAs tunnel junctions. As a result, these tunnel junctions have exhibited record peak current densities of up to 31,000 A/cm² at RT, with a peak-to-valley current ratio of 2.1. It was also shown that the tunnel junction characteristics are strongly dependent on the sidewall mesa orientation. In order to investigate the midgap levels at the re-growth interface region, photocapacitance (PC) measurements were made on area-selective re-grown sidewall p⁺ i n⁺ junctions.

Original language	English
Pages (from-to)	e1085-e1089
Journal	Journal of Crystal Growth
Volume	275
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.11.137
Publication status	Published - 2005 Feb 15

Keywords

A1. Doping
A1. Impurities
A1. Interfaces
A3. Atomic layer epitaxy
A3. Selective epitaxy
B2. Semiconducting gallium arsenide

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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title = "Ultra shallow sidewall GaAs tunnel junctions prepared by low-temperature area-selective epitaxial re-growth method",

abstract = "Low-temperature (290°C) area-selective re-growth (LT-ASR) by molecular layer epitaxy (MLE) was applied to the fabrication of ultra shallow (50 nm) sidewall GaAs tunnel junctions. As a result, these tunnel junctions have exhibited record peak current densities of up to 31,000 A/cm2 at RT, with a peak-to-valley current ratio of 2.1. It was also shown that the tunnel junction characteristics are strongly dependent on the sidewall mesa orientation. In order to investigate the midgap levels at the re-growth interface region, photocapacitance (PC) measurements were made on area-selective re-grown sidewall p+ i n+ junctions.",

keywords = "A1. Doping, A1. Impurities, A1. Interfaces, A3. Atomic layer epitaxy, A3. Selective epitaxy, B2. Semiconducting gallium arsenide",

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T1 - Ultra shallow sidewall GaAs tunnel junctions prepared by low-temperature area-selective epitaxial re-growth method

AU - Oyama, Yutaka

AU - Ohno, Takeo

AU - Suto, Ken

AU - Nishizawa, Jun Ichi

PY - 2005/2/15

Y1 - 2005/2/15

N2 - Low-temperature (290°C) area-selective re-growth (LT-ASR) by molecular layer epitaxy (MLE) was applied to the fabrication of ultra shallow (50 nm) sidewall GaAs tunnel junctions. As a result, these tunnel junctions have exhibited record peak current densities of up to 31,000 A/cm2 at RT, with a peak-to-valley current ratio of 2.1. It was also shown that the tunnel junction characteristics are strongly dependent on the sidewall mesa orientation. In order to investigate the midgap levels at the re-growth interface region, photocapacitance (PC) measurements were made on area-selective re-grown sidewall p+ i n+ junctions.

AB - Low-temperature (290°C) area-selective re-growth (LT-ASR) by molecular layer epitaxy (MLE) was applied to the fabrication of ultra shallow (50 nm) sidewall GaAs tunnel junctions. As a result, these tunnel junctions have exhibited record peak current densities of up to 31,000 A/cm2 at RT, with a peak-to-valley current ratio of 2.1. It was also shown that the tunnel junction characteristics are strongly dependent on the sidewall mesa orientation. In order to investigate the midgap levels at the re-growth interface region, photocapacitance (PC) measurements were made on area-selective re-grown sidewall p+ i n+ junctions.

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KW - A1. Impurities

KW - A1. Interfaces

KW - A3. Atomic layer epitaxy

KW - A3. Selective epitaxy

KW - B2. Semiconducting gallium arsenide

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