Ultra shallow sidewall GaAs tunnel junctions implemented with molecular layer epitaxy

T. Ohno, Y. Oyama, K. Tezuka, K. Suto, J. Nishizawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low-temperature (290°C) area selective regrowth by molecular layer epitaxy (MLE) was applied for the fabrication of ultra shallow sidewall GaAs tunnel junctions with the junction depth of 50 nm at 100 μm long strip. Fabricated tunnel junctions have shown the record peak current density up to 35000 A/cm2. It is shown that the tunnel junction characteristics are seriously dependent on the sidewall orientation and the regrown interface quality, which is controlled by the surface treatment under AsH3 just prior to regrowth. MLE with the low-temperature area selective regrowth process is one of the most promising methods for the fabrication of ultra short channel devices.

Original languageEnglish
Title of host publicationExtended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages59-62
Number of pages4
ISBN (Electronic)4891140283, 9784891140281
DOIs
Publication statusPublished - 2002 Jan 1
Event3rd International Workshop on Junction Technology, IWJT 2002 - Tokyo, Japan
Duration: 2002 Dec 22002 Dec 3

Publication series

NameExtended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002

Other

Other3rd International Workshop on Junction Technology, IWJT 2002
CountryJapan
CityTokyo
Period02/12/202/12/3

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Ultra shallow sidewall GaAs tunnel junctions implemented with molecular layer epitaxy'. Together they form a unique fingerprint.

  • Cite this

    Ohno, T., Oyama, Y., Tezuka, K., Suto, K., & Nishizawa, J. (2002). Ultra shallow sidewall GaAs tunnel junctions implemented with molecular layer epitaxy. In Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002 (pp. 59-62). [1225203] (Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWJT.2002.1225203