Ultra-shallow junction with elevated SiGe source/drain fabricated by laser-induced atomic layer doping

Eun Sik Jung, Ji Chel Bea, Young Jae Lee

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The ultra-shallow junction with elevated SiGe source/drain fabricated by laser-induced atomic layer doping was presented. The ultra-shallow junction formation technology was based on a damage-free process for replacing low energy ion implantation. The ultra-shallow junction formation technology was realized using ultra-high vacuum chemical vapor deposition and excimer laser annealing.

Original languageEnglish
Pages (from-to)926-927
Number of pages2
JournalElectronics Letters
Volume38
Issue number16
DOIs
Publication statusPublished - 2002 Aug 1
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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