Abstract
The ultra-shallow junction with elevated SiGe source/drain fabricated by laser-induced atomic layer doping was presented. The ultra-shallow junction formation technology was based on a damage-free process for replacing low energy ion implantation. The ultra-shallow junction formation technology was realized using ultra-high vacuum chemical vapor deposition and excimer laser annealing.
Original language | English |
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Pages (from-to) | 926-927 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 38 |
Issue number | 16 |
DOIs | |
Publication status | Published - 2002 Aug 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering