Ultra-shallow junction with elevated SiGe source/drain fabricated by laser-induced atomic layer doping

Eun Sik Jung; Ji Chel Bea; Young Jae Lee

doi:10.1049/el:20020512

Ultra-shallow junction with elevated SiGe source/drain fabricated by laser-induced atomic layer doping

Eun Sik Jung, Ji Chel Bea, Young Jae Lee

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The ultra-shallow junction with elevated SiGe source/drain fabricated by laser-induced atomic layer doping was presented. The ultra-shallow junction formation technology was based on a damage-free process for replacing low energy ion implantation. The ultra-shallow junction formation technology was realized using ultra-high vacuum chemical vapor deposition and excimer laser annealing.

Original language	English
Pages (from-to)	926-927
Number of pages	2
Journal	Electronics Letters
Volume	38
Issue number	16
DOIs	https://doi.org/10.1049/el:20020512
Publication status	Published - 2002 Aug 1
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20020512

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title = "Ultra-shallow junction with elevated SiGe source/drain fabricated by laser-induced atomic layer doping",

abstract = "The ultra-shallow junction with elevated SiGe source/drain fabricated by laser-induced atomic layer doping was presented. The ultra-shallow junction formation technology was based on a damage-free process for replacing low energy ion implantation. The ultra-shallow junction formation technology was realized using ultra-high vacuum chemical vapor deposition and excimer laser annealing.",

author = "Jung, {Eun Sik} and Bea, {Ji Chel} and Lee, {Young Jae}",

year = "2002",

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doi = "10.1049/el:20020512",

language = "English",

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journal = "Electronics Letters",

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publisher = "Institution of Engineering and Technology",

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AU - Jung, Eun Sik

AU - Bea, Ji Chel

AU - Lee, Young Jae

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Y1 - 2002/8/1

N2 - The ultra-shallow junction with elevated SiGe source/drain fabricated by laser-induced atomic layer doping was presented. The ultra-shallow junction formation technology was based on a damage-free process for replacing low energy ion implantation. The ultra-shallow junction formation technology was realized using ultra-high vacuum chemical vapor deposition and excimer laser annealing.

AB - The ultra-shallow junction with elevated SiGe source/drain fabricated by laser-induced atomic layer doping was presented. The ultra-shallow junction formation technology was based on a damage-free process for replacing low energy ion implantation. The ultra-shallow junction formation technology was realized using ultra-high vacuum chemical vapor deposition and excimer laser annealing.

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JF - Electronics Letters

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Ultra-shallow junction with elevated SiGe source/drain fabricated by laser-induced atomic layer doping

Abstract

ASJC Scopus subject areas

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