Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer

Y. H. Song, Jichoru Be, M. Oonishi, T. Honda, H. Kurino, Mitsumasa Koyanagi

Research output: Contribution to conferencePaper

Abstract

A source and drain junction technology is proposed for realizing sub 0.1 μm NMOSFETs. In this technology, source and drain extension (SDE) is fabricated using As diffusion from As absorbed atomic layer on silicon surface by high temperature RTA. NMOSFET fabricated using this technology shows better suppression of short channel effect (SCE) compared to conventional FET.

Original languageEnglish
Pages80-81
Number of pages2
Publication statusPublished - 1999 Dec 1
EventProceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA
Duration: 1999 Jun 281999 Jun 30

Other

OtherProceedings of the 1999 57th Annual Device Research Conference Digest (DRC)
CitySanta Barbara, CA, USA
Period99/6/2899/6/30

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Song, Y. H., Be, J., Oonishi, M., Honda, T., Kurino, H., & Koyanagi, M. (1999). Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer. 80-81. Paper presented at Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC), Santa Barbara, CA, USA, .