Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer

Y. H. Song; J. C. Bea; M. Oonishi; T. Honda; H. Kurino; M. Koyanagi

Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer

Y. H. Song, J. C. Bea, M. Oonishi, T. Honda, H. Kurino, M. Koyanagi

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to conference › Paper › peer-review

Abstract

A source and drain junction technology is proposed for realizing sub 0.1 μm NMOSFETs. In this technology, source and drain extension (SDE) is fabricated using As diffusion from As absorbed atomic layer on silicon surface by high temperature RTA. NMOSFET fabricated using this technology shows better suppression of short channel effect (SCE) compared to conventional FET.

Original language	English
Pages	80-81
Number of pages	2
Publication status	Published - 1999
Event	Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA Duration: 1999 Jun 28 → 1999 Jun 30

Other

Other	Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC)
City	Santa Barbara, CA, USA
Period	99/6/28 → 99/6/30

ASJC Scopus subject areas

Engineering(all)

Cite this

@conference{5bf47fd8db80495dbe192c5a5ed47d3e,

title = "Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer",

abstract = "A source and drain junction technology is proposed for realizing sub 0.1 μm NMOSFETs. In this technology, source and drain extension (SDE) is fabricated using As diffusion from As absorbed atomic layer on silicon surface by high temperature RTA. NMOSFET fabricated using this technology shows better suppression of short channel effect (SCE) compared to conventional FET.",

author = "Song, {Y. H.} and Bea, {J. C.} and M. Oonishi and T. Honda and H. Kurino and M. Koyanagi",

year = "1999",

language = "English",

pages = "80--81",

note = "Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) ; Conference date: 28-06-1999 Through 30-06-1999",

}

TY - CONF

T1 - Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer

AU - Song, Y. H.

AU - Bea, J. C.

AU - Oonishi, M.

AU - Honda, T.

AU - Kurino, H.

AU - Koyanagi, M.

PY - 1999

Y1 - 1999

N2 - A source and drain junction technology is proposed for realizing sub 0.1 μm NMOSFETs. In this technology, source and drain extension (SDE) is fabricated using As diffusion from As absorbed atomic layer on silicon surface by high temperature RTA. NMOSFET fabricated using this technology shows better suppression of short channel effect (SCE) compared to conventional FET.

AB - A source and drain junction technology is proposed for realizing sub 0.1 μm NMOSFETs. In this technology, source and drain extension (SDE) is fabricated using As diffusion from As absorbed atomic layer on silicon surface by high temperature RTA. NMOSFET fabricated using this technology shows better suppression of short channel effect (SCE) compared to conventional FET.

UR - http://www.scopus.com/inward/record.url?scp=0033359151&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033359151&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0033359151

SP - 80

EP - 81

T2 - Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC)

Y2 - 28 June 1999 through 30 June 1999

ER -

Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer

Abstract

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ASJC Scopus subject areas

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