Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer

Y. H. Song; Jichoru Be; M. Oonishi; T. Honda; H. Kurino; Mitsumasa Koyanagi

Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer

Y. H. Song, Jichoru Be, M. Oonishi, T. Honda, H. Kurino, Mitsumasa Koyanagi

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to conference › Paper › peer-review

Abstract

A source and drain junction technology is proposed for realizing sub 0.1 μm NMOSFETs. In this technology, source and drain extension (SDE) is fabricated using As diffusion from As absorbed atomic layer on silicon surface by high temperature RTA. NMOSFET fabricated using this technology shows better suppression of short channel effect (SCE) compared to conventional FET.

Original language	English
Pages	80-81
Number of pages	2
Publication status	Published - 1999 Dec 1
Event	Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA Duration: 1999 Jun 28 → 1999 Jun 30

Other

Other	Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC)
City	Santa Barbara, CA, USA
Period	99/6/28 → 99/6/30

ASJC Scopus subject areas

Engineering(all)

Fingerprint Dive into the research topics of 'Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer'. Together they form a unique fingerprint.

Cite this

Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer. / Song, Y. H.; Be, Jichoru; Oonishi, M.; Honda, T.; Kurino, H.; Koyanagi, Mitsumasa.

1999. 80-81 Paper presented at Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC), Santa Barbara, CA, USA, .

Research output: Contribution to conference › Paper › peer-review

@conference{5bf47fd8db80495dbe192c5a5ed47d3e,

title = "Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer",

abstract = "A source and drain junction technology is proposed for realizing sub 0.1 μm NMOSFETs. In this technology, source and drain extension (SDE) is fabricated using As diffusion from As absorbed atomic layer on silicon surface by high temperature RTA. NMOSFET fabricated using this technology shows better suppression of short channel effect (SCE) compared to conventional FET.",

author = "Song, {Y. H.} and Jichoru Be and M. Oonishi and T. Honda and H. Kurino and Mitsumasa Koyanagi",

year = "1999",

month = dec,

day = "1",

language = "English",

pages = "80--81",

note = "Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) ; Conference date: 28-06-1999 Through 30-06-1999",

}

TY - CONF

T1 - Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer

AU - Song, Y. H.

AU - Be, Jichoru

AU - Oonishi, M.

AU - Honda, T.

AU - Kurino, H.

AU - Koyanagi, Mitsumasa

PY - 1999/12/1

Y1 - 1999/12/1

N2 - A source and drain junction technology is proposed for realizing sub 0.1 μm NMOSFETs. In this technology, source and drain extension (SDE) is fabricated using As diffusion from As absorbed atomic layer on silicon surface by high temperature RTA. NMOSFET fabricated using this technology shows better suppression of short channel effect (SCE) compared to conventional FET.

AB - A source and drain junction technology is proposed for realizing sub 0.1 μm NMOSFETs. In this technology, source and drain extension (SDE) is fabricated using As diffusion from As absorbed atomic layer on silicon surface by high temperature RTA. NMOSFET fabricated using this technology shows better suppression of short channel effect (SCE) compared to conventional FET.

UR - http://www.scopus.com/inward/record.url?scp=0033359151&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033359151&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0033359151

SP - 80

EP - 81

T2 - Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC)

Y2 - 28 June 1999 through 30 June 1999

ER -

Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer

Abstract

Other

ASJC Scopus subject areas

Other files and links

Cite this