Ultra-shallow junction formed using laser annealing for sub-50 nm MOS devices

H. Oh, H. Choi, Jichoru Be, T. Hirosue, J. Sim, H. Kurino, Mitsumasa Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Requirements for the shallow junction technology in the sub-50 nm regime have been discussed. We propose a new ultra-shallow junction formation method called as Laser Induced Atomic Layer Doping (LI-ALD). The ultra-shallow junction with the depth of less than 20 nm could be formed using LI-ALD. The NMOS transistors with the ultra shallow junction formed by LI-ALD were demonstrated in this paper.

Original languageEnglish
Title of host publicationExtended Abstracts of the 2nd International Workshop on Junction Technology, IWJT 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages95-98
Number of pages4
ISBN (Electronic)4891140194, 9784891140199
DOIs
Publication statusPublished - 2001 Jan 1
Event2nd International Workshop on Junction Technology, IWJT 2001 - Tokyo, Japan
Duration: 2001 Nov 292001 Nov 30

Publication series

NameExtended Abstracts of the 2nd International Workshop on Junction Technology, IWJT 2001

Other

Other2nd International Workshop on Junction Technology, IWJT 2001
Country/TerritoryJapan
CityTokyo
Period01/11/2901/11/30

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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