Ultra shallow junction formation using excimer laser annealing for ultra small devices

E. S. Jung, J. C. Bea, Y. J. Lee

Research output: Contribution to conferencePaperpeer-review

Abstract

In this paper, novel device structures in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA). Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10∼20 nm for arsenic dosage(2×1014/cm2), excimer laser source(λ = 248 nm) is KrF, and sheet resistances are measured to 1 KΩ/□ at junction depth of 15 nm.

Original languageEnglish
Pages586-589
Number of pages4
Publication statusPublished - 2001 Jan 1
Externally publishedYes
Event2001 IEEE International Symposium on Industrial Electronics Proceedings (ISIE 2001) - Pusan, Korea, Republic of
Duration: 2001 Jun 122001 Jun 16

Other

Other2001 IEEE International Symposium on Industrial Electronics Proceedings (ISIE 2001)
CountryKorea, Republic of
CityPusan
Period01/6/1201/6/16

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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