Ultra shallow incorporation of nitrogen into gate dielectrics by pulse time modulated plasma

Seiichi Fukuda, Yoshimune Suzuki, Tomoyuki Hirano, Takayoshi Kato, Akihide Kashiwagi, Masaki Saito, Shingo Kadomura, Youichi Minemura, Seiji Samukawa

Research output: Contribution to journalConference articlepeer-review

Abstract

In order to obtain a controllability in the nitrogen depth profile in the oxy-nitride gate dielectrics which has been known to have a strong effect on MOS reliability, micro second ordered pulse was used for the inductive coupled plasma source in our pulse time modulated plasma. The radio frequency (RF) of source plasma and pulse frequency were 12.56 MHz and 10 kHz (100 micro second), respectively. Pulse duty ratio was varied from 20 to 100 %. 1.7nm thick thermal silicon dioxide films were subjected to the pulse time modulated plasma and analyzed by SIMS to see the depth profile of nitrogen. A new finding is that both the concentration and the peak position of nitrogen atoms in silicon dioxide films depend on the pulse duty ratio and plasma radiation time. NBTI lifetime was improved with decreased interface state density. We also used this technique to high-k material and investigated process characteristics of nitridation.

Original languageEnglish
Pages (from-to)239-244
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume786
DOIs
Publication statusPublished - 2003 Jan 1
EventFundamentals of Novel Oxide/Semiconductor Interfaces Symposium - Boston, MA., United States
Duration: 2003 Dec 12003 Dec 4

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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