A new raised source/drain (RSD) structure is proposed, which combines facet controlled in-situ-doped selective Si epitaxial growth (SEG) and solid-phase diffusion (SPD). This can provide ultra-shallow junctions without sacrificing the parasitic resistance, nor capacitance. 0.1μm pMOSFETs with 20nm deep junctions exhibiting excellent electrical characteristics and reliability were demonstrated. Compatibility with CMOS process was also confirmed.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 1996 Jan 1|
|Event||Proceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA|
Duration: 1996 Jun 11 → 1996 Jun 13
ASJC Scopus subject areas
- Electrical and Electronic Engineering