Ultra-shallow in-situ-doped raised source/drain structure for sub-tenth micron CMOS

Y. Nakahara, K. Takeuchi, T. Tatsumi, Y. Ochiai, S. Manako, S. Samukawa, A. Furukawa

Research output: Contribution to journalConference article

12 Citations (Scopus)

Abstract

A new raised source/drain (RSD) structure is proposed, which combines facet controlled in-situ-doped selective Si epitaxial growth (SEG) and solid-phase diffusion (SPD). This can provide ultra-shallow junctions without sacrificing the parasitic resistance, nor capacitance. 0.1μm pMOSFETs with 20nm deep junctions exhibiting excellent electrical characteristics and reliability were demonstrated. Compatibility with CMOS process was also confirmed.

Original languageEnglish
Pages (from-to)174-175
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 1996 Jan 1
Externally publishedYes
EventProceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 1996 Jun 111996 Jun 13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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