Ultra shallow GaAs sidewall tunnel junctions implemented with low-temperature area selective regrowth

Yutaka Oyama, Takeo Ohno, Kenji Tezuka, Ken Suto, Jun Ichi Nishizawa

Research output: Contribution to journalConference article

Abstract

Low temperature (290°C) area selective regrowth by molecular layer epitaxy (MLE) was applied for the fabrication of ultra shallow sidewall GaAs tunnel junctions with the junction depth of 49nm. The tunnel junctions have shown the record peak current density (Jp) up to 31000A/cm 2 and negative differential conductance of-1.4×10-5 S at 100μm long strip structure. The mechanisms of strong sidewall orientation depend-ences of Jp are discussed.

Original languageEnglish
Pages (from-to)9-12
Number of pages4
JournalInstitute of Physics Conference Series
Volume174
Publication statusPublished - 2003 Dec 1
EventCompound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors - Lausanne, Switzerland
Duration: 2002 Oct 72002 Oct 10

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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