Low temperature (290°C) area selective regrowth by molecular layer epitaxy (MLE) was applied for the fabrication of ultra shallow sidewall GaAs tunnel junctions with the junction depth of 49nm. The tunnel junctions have shown the record peak current density (Jp) up to 31000A/cm 2 and negative differential conductance of-1.4×10-5 S at 100μm long strip structure. The mechanisms of strong sidewall orientation depend-ences of Jp are discussed.
|Number of pages||4|
|Journal||Institute of Physics Conference Series|
|Publication status||Published - 2003 Dec 1|
|Event||Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors - Lausanne, Switzerland|
Duration: 2002 Oct 7 → 2002 Oct 10
ASJC Scopus subject areas
- Physics and Astronomy(all)