Ultra-low temperature flattening technique of silicon surface using Xe/H2 plasma

Tomoyuki Suwa, Akinobu Teramoto, Tetsuya Goto, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In order to flatten any crystal orientation Si surface including Sifin-structure and to introduce the flattening process just before the gate oxide formation in the latest LSI manufacturing process, it is strongly required that the flattening process is carried out at lower temperature. By introducing Xe/H2 plasma flattening at 400 oC just before the gate oxide formation, the breakdown field intensity (Ebd) was improved and Ebd fluctuation became much smaller than that of conventional.

Original languageEnglish
Title of host publicationAdvanced CMOS-Compatible Semiconductor Devices 17
EditorsY. Omura, J. A. Martino, J. P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B. Y. Nguyen
PublisherElectrochemical Society Inc.
Pages277-283
Number of pages7
Edition5
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2015
EventSymposium on Advanced CMOS-Compatible Semiconductor Devices 17 - 227th ECS Meeting - Chicago, United States
Duration: 2015 May 242015 May 28

Publication series

NameECS Transactions
Number5
Volume66
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Advanced CMOS-Compatible Semiconductor Devices 17 - 227th ECS Meeting
CountryUnited States
CityChicago
Period15/5/2415/5/28

ASJC Scopus subject areas

  • Engineering(all)

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