Ultra-low-power SiGe HBTs using high-precision RT-CVD epitaxial growth

K. Oda, M. Miura, H. Shimamoto, K. Washio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A high-precision RT-CVD epitaxial growth technique has been successfully developed for fabricating ultra-low-power SiGe HBTs. Extremely high-concentration doping with abrupt profiles in the Si/SiGe layers was achieved without hightemperature activation annealing. Furthermore, good crystallinity of the grown layer was also achieved, which results in low resistivity. A maj́or advantage of the techníque is that SiGe HBTs fabricated using it have high cutoff frequencies at low current density (50 GHz at Jc = 0.2 mA/μm2), which makes them highly suitable devices for use in future low-power high-speed communication systems.

Original languageEnglish
Title of host publicationECS Transactions - SiGe, Ge, and Related Compounds 3
Subtitle of host publicationMaterials, Processing, and Devices
Pages1089-1094
Number of pages6
Edition10
DOIs
Publication statusPublished - 2008 Dec 1
Event3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 122008 Oct 17

Publication series

NameECS Transactions
Number10
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1208/10/17

ASJC Scopus subject areas

  • Engineering(all)

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    Oda, K., Miura, M., Shimamoto, H., & Washio, K. (2008). Ultra-low-power SiGe HBTs using high-precision RT-CVD epitaxial growth. In ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices (10 ed., pp. 1089-1094). (ECS Transactions; Vol. 16, No. 10). https://doi.org/10.1149/1.2986872