@inproceedings{4ff17a9eeeb342e58bd040b95a922ae8,
title = "Ultra-low-power SiGe HBTs using high-precision RT-CVD epitaxial growth",
abstract = "A high-precision RT-CVD epitaxial growth technique has been successfully developed for fabricating ultra-low-power SiGe HBTs. Extremely high-concentration doping with abrupt profiles in the Si/SiGe layers was achieved without hightemperature activation annealing. Furthermore, good crystallinity of the grown layer was also achieved, which results in low resistivity. A ma{\'j}or advantage of the techn{\'i}que is that SiGe HBTs fabricated using it have high cutoff frequencies at low current density (50 GHz at Jc = 0.2 mA/μm2), which makes them highly suitable devices for use in future low-power high-speed communication systems.",
author = "K. Oda and M. Miura and H. Shimamoto and K. Washio",
year = "2009",
doi = "10.1149/1.2986872",
language = "English",
isbn = "9781566776561",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "10",
pages = "1089--1094",
booktitle = "ECS Transactions - SiGe, Ge, and Related Compounds 3",
edition = "10",
note = "3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting ; Conference date: 12-10-2008 Through 17-10-2008",
}