TY - GEN
T1 - Ultra-low-power SiGe HBT technology for wide-range microwave applications
AU - Miura, Makoto
AU - Shimamoto, Hiromi
AU - Oda, Katsuya
AU - Washio, Katsuyoshi
PY - 2008/12/30
Y1 - 2008/12/30
N2 - Ultra-low power SiGe HBT was developed for wide-range microwave applications. The key technologies of the SiGe HBT are based on well-controlled SiGe / Si epitaxial growth techniques with low-temperature chemical vapor deposition (CVD), which give several important features of the low-power SiGe HBT. The prominent features are a robustly designed n+-n --p+ emitter-base junction and a narrow base, realized by an epitaxially grown emitter and a low-temperature thermal cleaning prior to the emitter growth. These features were found to decrease both an emitter junction capacitance (CJE) and a carrier transit time in base (τB) in a great extent. The low-temperature CVD also contributed to the reduction of a collector junction capacitance (CJC) by controlling a mono-poly interface in the collector. The effective decrease of CJE, τB, and CJC has increased a cutoff frequency (fT) at a wide range of a collector current density (J C). As a result, Jc of the SiGe HBT decreased more than 60% compared to published data, at a wide fT range from 30 to 200 GHz. Index Terms - Heterojunction bipolar transistors, epitaxial growth, impurity profile, Si spacer, emitter capacitance, collector capacitance, corrector current density.
AB - Ultra-low power SiGe HBT was developed for wide-range microwave applications. The key technologies of the SiGe HBT are based on well-controlled SiGe / Si epitaxial growth techniques with low-temperature chemical vapor deposition (CVD), which give several important features of the low-power SiGe HBT. The prominent features are a robustly designed n+-n --p+ emitter-base junction and a narrow base, realized by an epitaxially grown emitter and a low-temperature thermal cleaning prior to the emitter growth. These features were found to decrease both an emitter junction capacitance (CJE) and a carrier transit time in base (τB) in a great extent. The low-temperature CVD also contributed to the reduction of a collector junction capacitance (CJC) by controlling a mono-poly interface in the collector. The effective decrease of CJE, τB, and CJC has increased a cutoff frequency (fT) at a wide range of a collector current density (J C). As a result, Jc of the SiGe HBT decreased more than 60% compared to published data, at a wide fT range from 30 to 200 GHz. Index Terms - Heterojunction bipolar transistors, epitaxial growth, impurity profile, Si spacer, emitter capacitance, collector capacitance, corrector current density.
UR - http://www.scopus.com/inward/record.url?scp=57949091105&partnerID=8YFLogxK
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U2 - 10.1109/BIPOL.2008.4662729
DO - 10.1109/BIPOL.2008.4662729
M3 - Conference contribution
AN - SCOPUS:57949091105
SN - 9781424427260
T3 - Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
SP - 129
EP - 132
BT - 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
T2 - 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Y2 - 13 October 2008 through 15 October 2008
ER -