Ultra-low-power SiGe HBT technology for wide-range microwave applications

Makoto Miura, Hiromi Shimamoto, Katsuya Oda, Katsuyoshi Washio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)


Ultra-low power SiGe HBT was developed for wide-range microwave applications. The key technologies of the SiGe HBT are based on well-controlled SiGe / Si epitaxial growth techniques with low-temperature chemical vapor deposition (CVD), which give several important features of the low-power SiGe HBT. The prominent features are a robustly designed n+-n --p+ emitter-base junction and a narrow base, realized by an epitaxially grown emitter and a low-temperature thermal cleaning prior to the emitter growth. These features were found to decrease both an emitter junction capacitance (CJE) and a carrier transit time in base (τB) in a great extent. The low-temperature CVD also contributed to the reduction of a collector junction capacitance (CJC) by controlling a mono-poly interface in the collector. The effective decrease of CJE, τB, and CJC has increased a cutoff frequency (fT) at a wide range of a collector current density (J C). As a result, Jc of the SiGe HBT decreased more than 60% compared to published data, at a wide fT range from 30 to 200 GHz. Index Terms - Heterojunction bipolar transistors, epitaxial growth, impurity profile, Si spacer, emitter capacitance, collector capacitance, corrector current density.

Original languageEnglish
Title of host publication2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Number of pages4
Publication statusPublished - 2008 Dec 30
Externally publishedYes
Event2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Monterey, CA, United States
Duration: 2008 Oct 132008 Oct 15

Publication series

NameProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)1088-9299


Other2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Country/TerritoryUnited States
CityMonterey, CA

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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