Ultra-low-power and high-speed SiGe base bipolar transistors for wireless telecommunication systems

Masao Kondo, Katsuya Oda, Eiji Ohue, Hiromi Shimamoto, Masamichi Tanabe, Takahiro Onai, Katsuyoshi Washio

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

Ultra-low-power and high-speed SiGe base bipolar transistors that can be used in RF sections of multi-GHz telecommunication systems have been developed. The SiGe base and a poly-Si/SiGe base-contact were formed by selective growth in a self-aligned manner. The transistors have a very small base-collector capacitance (below 1 fF for an emitter area of 0.2 x 0.7 /urn) and exhibit a high maximum oscillation frequency (30-70 GHz) at low current (5-100 /iA). The power-delay product of an ECL ring oscillator is only 5.1 fj/gate for a 250-mV voltage swing. The maximum toggle frequency of a one-eigth static divider is 4.7 GHz at a switching current of 68 /uA/FF.

Original languageEnglish
Pages (from-to)1287-1294
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume45
Issue number6
DOIs
Publication statusPublished - 1998 Dec 1
Externally publishedYes

Keywords

  • Bipolar transistor logic devices
  • Bipolar transistor oscillators
  • Bipolar transistors
  • Heterojunction bipolar transistors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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