Ultra-low-power and high-speed SiGe base bipolar transistors for wireless telecommunication systems

Masao Kondo; Katsuya Oda; Eiji Ohue; Hiromi Shimamoto; Masamichi Tanabe; Takahiro Onai; Katsuyoshi Washio

doi:10.1109/16.678548

Ultra-low-power and high-speed SiGe base bipolar transistors for wireless telecommunication systems

Masao Kondo, Katsuya Oda, Eiji Ohue, Hiromi Shimamoto, Masamichi Tanabe, Takahiro Onai, Katsuyoshi Washio

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Ultra-low-power and high-speed SiGe base bipolar transistors that can be used in RF sections of multi-GHz telecommunication systems have been developed. The SiGe base and a poly-Si/SiGe base-contact were formed by selective growth in a self-aligned manner. The transistors have a very small base-collector capacitance (below 1 fF for an emitter area of 0.2 x 0.7 /urn) and exhibit a high maximum oscillation frequency (30-70 GHz) at low current (5-100 /iA). The power-delay product of an ECL ring oscillator is only 5.1 fj/gate for a 250-mV voltage swing. The maximum toggle frequency of a one-eigth static divider is 4.7 GHz at a switching current of 68 /uA/FF.

Original language	English
Pages (from-to)	1287-1294
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	45
Issue number	6
DOIs	https://doi.org/10.1109/16.678548
Publication status	Published - 1998 Dec 1
Externally published	Yes

Keywords

Bipolar transistor logic devices
Bipolar transistor oscillators
Bipolar transistors
Heterojunction bipolar transistors

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Ultra-low-power and high-speed SiGe base bipolar transistors for wireless telecommunication systems",

abstract = "Ultra-low-power and high-speed SiGe base bipolar transistors that can be used in RF sections of multi-GHz telecommunication systems have been developed. The SiGe base and a poly-Si/SiGe base-contact were formed by selective growth in a self-aligned manner. The transistors have a very small base-collector capacitance (below 1 fF for an emitter area of 0.2 x 0.7 /urn) and exhibit a high maximum oscillation frequency (30-70 GHz) at low current (5-100 /iA). The power-delay product of an ECL ring oscillator is only 5.1 fj/gate for a 250-mV voltage swing. The maximum toggle frequency of a one-eigth static divider is 4.7 GHz at a switching current of 68 /uA/FF.",

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author = "Masao Kondo and Katsuya Oda and Eiji Ohue and Hiromi Shimamoto and Masamichi Tanabe and Takahiro Onai and Katsuyoshi Washio",

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AU - Kondo, Masao

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AU - Ohue, Eiji

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AU - Tanabe, Masamichi

AU - Onai, Takahiro

AU - Washio, Katsuyoshi

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