Ultra-low base resistance self-aligned SEG SiGe HBTs for high-sensitivity wide-bandwidth amplifiers

Tatsuya Tominari, Hiromi Shimamoto, Makoto Miura, Yoshinori Yoshida, Shin'ichiro Wada, Hideyuki Takahashi, Mitsuru Arai, Hideyuki Hosoe, Katsuyoshi Washio, Takashi Hashimoto

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


To fabricate a SiGe HBT with low base resistance, a heavily boron-doped and high-Ge-content base and a high-peripheral-ratio emitter configuration were applied. To retain a high h FE and f T for low intrinsic/extrinsic base resistances, the Ge profile was carefully optimized. The emitter configuration with a high periphery-to-area ratio could be introduced through the advantage of the low parasitic capacitance in the self-aligned structure, and contributed to a further reduction of the base resistance without degradation of f T and f max. As a result, the base resistance was successfully reduced to about 1/3 of the previous HBT.

Original languageEnglish
Article number8.2
Pages (from-to)124-127
Number of pages4
JournalProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Publication statusPublished - 2005 Nov 30
Externally publishedYes
Event2005 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM - Santa Barbara, CA, United States
Duration: 2005 Oct 92005 Oct 11


  • Base resistance
  • Ge profile optimization
  • Heavy base doping
  • High-peripheral-ratio emitter layout
  • Wide-bandwidth amplifiers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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