Ultra-high speed, low power monolithic photoreceiver using InP/InGaAs doubleheterojunction bipolar transistors

E. Sano, K. Sano, T. Otsuji, K. Kurishima, S. Yamahata

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

A first 40Gbit/s RZ response is successfully obtained for monolithic photoreceivers by using a pin/DHBT configuration in which the pin-PD is formed on the layer structure that corresponds to the base-to-collector region of the DHBTs. The power dissipation of the photoreceiver is only 54mW.

Original languageEnglish
Pages (from-to)1047-1048
Number of pages2
JournalElectronics Letters
Volume33
Issue number12
DOIs
Publication statusPublished - 1997 Jun 5
Externally publishedYes

Keywords

  • Integrated optoelectronics
  • Optical receivers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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