Ultra-High Speed Devices for Wireless Communication Terminals (Current Status and Prospects)

Research output: Contribution to journalArticlepeer-review

Abstract

The technical trend of compound and Si ultra-high speed devices for wireless communication terminals is described. The choice of compound or Si devices depends on the RF frequency range and the required RF handling power. For high frequency applications and for high RF power circuit block, the compound devices still be used and new devices such as InGaP HBT has been developed. If the frequency range is below 6GHz, and the output power is limited, Si devices are becoming common for the transceiver system IC. Based on the device trends, the technical requirements for the ultra-high-speed devices for present and next-generation wireless applications are described. Developments of compound HBT PA and SiGe-RFIC's for 3G (W-CDMA) terminals are also; described and the circuit techniques used in these RF devices are introduced.

Original languageEnglish
Pages (from-to)296-302
Number of pages7
JournalIEEJ Transactions on Electronics, Information and Systems
Volume124
Issue number2
DOIs
Publication statusPublished - 2004 Jan
Externally publishedYes

Keywords

  • CMOS
  • GaAs
  • MMIC
  • Microwave
  • Mobile Communication
  • SiGe

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Ultra-High Speed Devices for Wireless Communication Terminals (Current Status and Prospects)'. Together they form a unique fingerprint.

Cite this