Abstract
The technical trend of compound and Si ultra-high speed devices for wireless communication terminals is described. The choice of compound or Si devices depends on the RF frequency range and the required RF handling power. For high frequency applications and for high RF power circuit block, the compound devices still be used and new devices such as InGaP HBT has been developed. If the frequency range is below 6GHz, and the output power is limited, Si devices are becoming common for the transceiver system IC. Based on the device trends, the technical requirements for the ultra-high-speed devices for present and next-generation wireless applications are described. Developments of compound HBT PA and SiGe-RFIC's for 3G (W-CDMA) terminals are also; described and the circuit techniques used in these RF devices are introduced.
| Original language | English |
|---|---|
| Pages (from-to) | 296-302 |
| Number of pages | 7 |
| Journal | IEEJ Transactions on Electronics, Information and Systems |
| Volume | 124 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2004 Jan |
| Externally published | Yes |
Keywords
- CMOS
- GaAs
- MMIC
- Microwave
- Mobile Communication
- SiGe
ASJC Scopus subject areas
- Electrical and Electronic Engineering