Symmetrical npn transistors with a sidewall base contact structure (SICOS) were developed and high cutoff frequencies of 14 GHz in downward and 4 GHz in upward operation were obtained. Using these transistors, high speed ECL circuits, frequency divider circuits and multiplier circuits are constructed and their performances are nearly equal to that of GaAs devices.
|Title of host publication||Conference on Solid State Devices and Materials|
|Publisher||Business Cent for Academic Soc Japan|
|Number of pages||4|
|Publication status||Published - 1986 Dec 1|
|Name||Conference on Solid State Devices and Materials|
ASJC Scopus subject areas