ULTRA HIGH SPEED BIPOLAR DEVICE-SICOS.

Tohru Nakamura, Kazuo Nakazato, Katsuyoshi Washio, Youichi Tamaki, Mitsuo Nanba, Tetsuya Hayashida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Symmetrical npn transistors with a sidewall base contact structure (SICOS) were developed and high cutoff frequencies of 14 GHz in downward and 4 GHz in upward operation were obtained. Using these transistors, high speed ECL circuits, frequency divider circuits and multiplier circuits are constructed and their performances are nearly equal to that of GaAs devices.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
PublisherBusiness Cent for Academic Soc Japan
Pages279-282
Number of pages4
ISBN (Print)493081314X
Publication statusPublished - 1986 Dec 1
Externally publishedYes

Publication series

NameConference on Solid State Devices and Materials

ASJC Scopus subject areas

  • Engineering(all)

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