Ultra high-power 2.5 kV-1800 A Power Pack IGBT

Yoshikazu Takahashi, Koh Yoshikawa, Takeharu Koga, Masayuki Soutome, Tetsumi Takano, Humiaki Kirihata, Yasukazu Seki

Research output: Contribution to conferencePaper

23 Citations (Scopus)

Abstract

A 2.5 kV-1000 A Power Pack insulated gate bipolar transistor (IGBT) used to solve high frequency, high temperature, and any terrible circumstances is presented. One of the important improvements for the IGBT chip and diode chips is the contact technology and electric discharge capability. In addition, by using the original size of large IGBT and diode chip in a square flat package structure, a compact and powerful device was achieved.

Original languageEnglish
Pages233-236
Number of pages4
Publication statusPublished - 1997 Jan 1
Externally publishedYes
EventProceedings of the 1997 9th International Symposium on Power Semiconductor Devices and ICs, ISPSD - Weimer, Ger
Duration: 1997 May 261997 May 29

Other

OtherProceedings of the 1997 9th International Symposium on Power Semiconductor Devices and ICs, ISPSD
CityWeimer, Ger
Period97/5/2697/5/29

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Takahashi, Y., Yoshikawa, K., Koga, T., Soutome, M., Takano, T., Kirihata, H., & Seki, Y. (1997). Ultra high-power 2.5 kV-1800 A Power Pack IGBT. 233-236. Paper presented at Proceedings of the 1997 9th International Symposium on Power Semiconductor Devices and ICs, ISPSD, Weimer, Ger, .