Ultra-fast optoelectronic circuit using resonant tunnelling diodes and unitravelling-carrier photodiode

K. Sano; K. Murata; T. Akeyoshi; N. Shimizu; T. Otsuji; M. Yamamoto; T. Ishibashi; E. Sano

doi:10.1049/el:19980202

Ultra-fast optoelectronic circuit using resonant tunnelling diodes and unitravelling-carrier photodiode

K. Sano, K. Murata, T. Akeyoshi, N. Shimizu, T. Otsuji, M. Yamamoto, T. Ishibashi, E. Sano

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

An ultra-fast optoelectronic circuit, using resonant tunnelling diodes (RTDs) and a uni-travelling-carrier photodiode (UTC-PD) is proposed. At extremely low power consumption, the circuit can demulitiplex an ultra-fast optical data signal into an electrical data signal with a lower bit rate. The monolithically fabricated circuit demultiplexed an 80Gbit/s optical signal into a 40Gbit/s electrical signal at 7.75mW.

Original language	English
Pages (from-to)	215-217
Number of pages	3
Journal	Electronics Letters
Volume	34
Issue number	2
DOIs	https://doi.org/10.1049/el:19980202
Publication status	Published - 1998 Jan 22
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19980202

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abstract = "An ultra-fast optoelectronic circuit, using resonant tunnelling diodes (RTDs) and a uni-travelling-carrier photodiode (UTC-PD) is proposed. At extremely low power consumption, the circuit can demulitiplex an ultra-fast optical data signal into an electrical data signal with a lower bit rate. The monolithically fabricated circuit demultiplexed an 80Gbit/s optical signal into a 40Gbit/s electrical signal at 7.75mW.",

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AU - Sano, K.

AU - Murata, K.

AU - Akeyoshi, T.

AU - Shimizu, N.

AU - Otsuji, T.

AU - Yamamoto, M.

AU - Ishibashi, T.

AU - Sano, E.

PY - 1998/1/22

Y1 - 1998/1/22

N2 - An ultra-fast optoelectronic circuit, using resonant tunnelling diodes (RTDs) and a uni-travelling-carrier photodiode (UTC-PD) is proposed. At extremely low power consumption, the circuit can demulitiplex an ultra-fast optical data signal into an electrical data signal with a lower bit rate. The monolithically fabricated circuit demultiplexed an 80Gbit/s optical signal into a 40Gbit/s electrical signal at 7.75mW.

AB - An ultra-fast optoelectronic circuit, using resonant tunnelling diodes (RTDs) and a uni-travelling-carrier photodiode (UTC-PD) is proposed. At extremely low power consumption, the circuit can demulitiplex an ultra-fast optical data signal into an electrical data signal with a lower bit rate. The monolithically fabricated circuit demultiplexed an 80Gbit/s optical signal into a 40Gbit/s electrical signal at 7.75mW.

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Ultra-fast optoelectronic circuit using resonant tunnelling diodes and unitravelling-carrier photodiode

Abstract

ASJC Scopus subject areas

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