Ultra-Fast Fabrication of <110>-Oriented β-SiC Wafers by Halide CVD

Rong Tu, Dingheng Zheng, Qingyun Sun, Mingxu Han, Song Zhang, Zhiying Hu, Takashi Goto, Lianmeng Zhang

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


Φ80 mm-diameter, highly <110>-oriented β-SiC wafers were ultra-fast fabricated via halide chemical vapor deposition (CVD) using tetrachlorosilane (SiCl4) and methane (CH4) as precursors. The effects of deposition temperature (Tdep) and total pressure (Ptot) on the orientations, microstructures, and deposition rate (Rdep) were investigated. Rdep dramatically increased with increasing Tdep where maximum Rdep was 930 μm/h at Tdep = 1823 K and Ptot = 4 kPa, leading to a maximum of 1.9 mm in thickness in 2 h deposition. The <110>-oriented β-SiC was obtained at Tdep > 1773 K and Ptot = 1-4 kPa. Growth mechanism of <110>-oriented β-SiC has also been discussed under consideration of crystallographic planes, surface energy, and surface morphology.

Original languageEnglish
Pages (from-to)84-88
Number of pages5
JournalJournal of the American Ceramic Society
Issue number1
Publication statusPublished - 2016 Jan 1

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry


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